InGaAs Geiger mode avalanche photodiode


Response wavelngth 900-1700nm, Material InGaAs, Detector response 0.85A/W@1550nm,

Part Number  :  IGA-APD-GM104-TEC
Unit Price  :  USD [Please inquire]
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Inventory quantity   :   [Please inquire]
Stock NO.   :  E80042039
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InGaAs avalanche photodiode (APD) is a special device for short-wave near-infrared single-photon detection,   which can meet the technical requirements of high efficiency and low noise single-photon detection in quantum    communication, weak light detection and other fields, and achieve 0.9-1.7 μm wavelength single photon detection.


Linear mode parameters

Model

IGA-APD-GM104-TEC

parameter

symbol

units

conditions

min

typ

max

Reverse  breakdown voltage

BR

V

22℃±3℃ ,ID =10μA

60

80

90

Responsivity

Re

A/W

22℃±3℃,λ =1550nm ,M =1

0.8

0.85


Dark current

ID

nA

22℃±3℃,M =10


0.1

0.3

Capacitance

C

pF

22℃±3℃ ,M =10,f=1MHz



0.25

Temperature

η

V/K

-40℃ ~80℃,ID =10μA



0.15


Coefficient of  breakdown voltage Geiger mode parameters

parameter

units

conditions

min

typ

max

PDE

%

-45℃, λ =1550nm, 0.1ph/pulse,poisson distribution single photon source

20

-


DCR

kHz

-45℃, 1ns gate width, 2MHz gated PRF, 1MHz optical PRF, PDE=20%

-

-

20*

APP


-45℃,1ns gate width, 2MHz gated PRF, 1MHz optical PRF, PDE=20%

-

-

1× 10-3

Tj

ps

-45℃, 1ns gate width, 2MHz gated PRF, PDE=20%

-

-

100

* Provide products of different grades and specifications


Room temperature IV curve:

P2.png

DCR-PDE(-45℃, fg=2MHz)

P3.png

Temperature coefficient

P4.png

Capacitance and Voltage

P5.png


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