1625nm DFB Laser Chip


Central wavelength 1625nm, Output power 5.5mW, SMSR 40dB

Part Number  :  TDLAS-DFBCHIPS-A-A81-W1625
Unit Price  :  USD [Please inquire]
Lead time  :  in stock
Inventory quantity   :   [Please inquire]
Stock NO.   :  I80011018
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The laser is a semiconductor InGaAsP DFB laser working at the 1625nm, 1648.2nm, 1650.9nm or 1653.7 nm wavelength range. The device can be delivered in chip forms. This high performance, and high reliability laser is suitable for gas detection application.

Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)

Parameter

Symbol

Min

Typ

Max

Unit

Centre Wavelength

λ

1625 1648.2 1650.9 1653.7nm

Side Mode Suppression Ratio

SMSR

30

40


dB

Threshold Current

Ith


5

10

mA

Operating Current

Iop


80

120

mA

Chip output Power

Pf

5.5

10

30

mW

Quantum Efficiency

η

0.08

0.12


mW/mA

Current Tuning Coefficient

∆λ/∆I


0.015


nm/mA

Temperature Tuning Coefficient

∆λ/∆T


0.12


nm/K

Forward Voltage

Vf


1.3

2

V

Kink deviation

KINK

30%

Beam divergence angle (parallel)

ϑ//


25


Deg

Beam Divergence angle (perpendicular)

ϑ


35


Deg

Resistance

Rs


8


ohm

20dB width

△λ


 1


nm


Related



Name Model Price
1648.2nm DFB Laser Chip [PDF]

TDLAS-DFBCHIPS-A-A81-W1648.2

USD 195.00 
 
1650.9nm DFB Laser Chip [PDF]

TDLAS-DFBCHIPS-A-A81-W1650.9

USD 195.00 
 
1653.7nm DFB Laser Chip [PDF]

TDLAS-DFBCHIPS-A-A81-W1653.7

USD 195.00 
 

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