InGaAs Single-Photon Avalanche Diodes


Response wavelngth 900~1700nm, Material InGaAs, TO46 Package, SMF-28E Fiber coupled+ FC/APC, Without TEC

Part Number  :  IGA-APD-GM104-R
Unit Price  :  USD [Please inquire]
Lead time  :  in stock
Inventory quantity   :   [Please inquire]
Stock NO.   :  E80042038
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InGaAs avalanche photodiode (APD) is a special device for short wave near-infrared single photon detection. It can meet the technical requirements for high-efficiency and low-noise single photon detection in the fields of quantum communication and weak light detection, and realize the detection of 0.9 ~ 1.7 μ m wavelength single photon detection.

Linear mode parameters

Product model

IGA-APD-GM104-R

parameters

Symbol

unit

Test   conditions

min

typical

max

Reverse breakdown voltage

VBR

V

22±3 ID =10μA

60

80

90

Reponsivity

Re

A/W

22±3 

λ =1550nm 

M =1

0.8

0.85


Dark current

ID

nA

22±3 M =10


0.1

0.3

Capacitance

C

PF

22±3 M =10 f=1MHz



0.25

Breakdown voltage temperature coefficient

η

V/K

-40 ~80℃,ID =10μA



0.15


Geiger mode parameters

parameters

unit

Test conditions

min

typical

max

Single Photon Detection Efficiency (PDE)

 

%

-45λ =1550nm,0.1ph/pulse

Poisson   distribution single photon source

 

20



 

Dack count rate (DCR)

 

kHz

-451ns gate   width2MHz Gated repetition   frequency

1MHz Optical repetition frequencyPDE=20%



 

20*

After pulse probability (APP)


-451ns gate width2MHz Gated repetition frequency

1MHz Optical repetition frequencyPDE=20%



 

1× 10-3

Time jitter (Tj)

ps

-451ns gate width 2MHz Gated repetition frequencyPDE=20%



100



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