5mm or 10mm Large active diameter Ge Photodiode


LD-PD INC'S 10X10 photodiode is ideal for measuring both pulsed and CW fiber light sources by converting optical power into electrical current. The detector is ceramic with an anode and cathode.

The photodiode anode produces a current, which is a function of the incident light power and the wavelength. The responsivity, Ը(λ), can be read from the plot on the following page to estimate the amount of photocurrent. This can be converted to a voltage by placing a load resistor (RL) from the photodiode anode to the circuit ground. Where P is the power, the output voltage is expressed by

ges.png

The bandwidth, fBW, and the rise time response, tR, are determined from the diode capacitance, CJ,

and the load resistance, RL, as shown below. The diode capacitance can be lowered by placing a bias voltage from the photodiode cathode to the circuit ground.

ges1.png



Product model


Name Model Price
5mm Ge Photodiode   [PDF]  [RFQ]

GE-5X5-TO8
Stock NO.: E80040033
[Please inquire]
10mm Ge Photodiode   [PDF]  [RFQ]

GE-10X10-TO9
Stock NO.: E80040032
[Please inquire]


Parameter



Features

● Large active area (10mm x 10mm)

● Low PDL

Specifications

Part Number

GE10X10-TO9

Key Feature

Largest Active Area

Sensor Material

Ge

Wavelength Range

800 - 1800 nm

Active Area

100 mm2
  (10 mm x 10 mm)

Rise/Fall Timeb

10 μs (Typ.) @ 1 V

NEP

4.0 x 10-12 W/Hz1/2 @ 1550 nmc

Dark Current

50 µA (Max) @ 0.3 V

Junction Capacitance

80 nF (Typ.) @ 1 V
  135 nF (Typ.) @ 0 V

Shunt Resistance

2 kΩ (Min)

Package

TO9 Package


Spectral Response

The responsivity of a photodiode is a measure of its sensitivity to light and is defined as the ratio of the photocurrent IP to the incident light power P at a given wavelength:

ges2.png

In other words, it is a measure of the effectiveness of the conversion of light power into electrical current. Responsivity varies from lot to lot and with the wavelength of the incident light, applied reverse bias, and temperature. It increases slightly with applied reverse bias due to improved charge collection efficiency in the photodiode. An increase or decrease in the temperature changes the width of the band gap, which will vary inversely with the temperature change.

ge1.png

Recommended Circuit

ge2.png

Diameter

ge3.png

Application

● Power meter

● Fiber Sensor



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