PD1000 InGaAs Photodiode Chip


LD-PD's  InGaAs pin structure based on InP by MOCVD method and planar diffusing technology. The sensitive areas of TO photodiode series products are φ75µm、φ300µm、φ500µm、φ1mm、φ2mm、φ3mmrespectively. The products with other sensitive area, shape or package style can also be provided according to the demand of users.


Product model



Name Model Price
PD1000 InGaAs Photodiode Chip   [PDF]  [RFQ]

PD1000
Stock NO.: I80030007
USD 12.00 
 


Parameter



Features

● High Responsivity, front side illuminated,double-side pads

● Φ=1mm, round optical window 

● Optimized for Machane(CH4) detection(1654nm), improving responsivity in low-temperature environment

E/O Characteristics

The Opto-electronic Characteristics(@Tc=22±3℃)

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Responsivity1

λ=1310nm

0.90

0.95

A/W

Responsivity2

λ=1550nm

0.95

1.00

A/W

Dark Current

V=-5V

2.0

3.0

nA

Breakdown   Voltage

I=-10µA

40.0

V

Capacitance

V=-5V,f=1MHz

45

55

pF

Forward   Voltage

I=1mA

0.40

0.43

0.80

V


As shown in Figure 1 @ Vr=0V TC=22± 3℃

t1.png


t2.png

Responsivity, R (A/W)

HBSABS.jpg

Outline Diagram and Die Dimensions

As shown in figure 1

t3.png

figure 1


Parameter

Min.

Typ.

Max.

Unit

Notes

Die Width

1140

1150

1160

µm


Die Length

1140

1150

1160

µm


Detection Window

1000

µm


Thickness

190

200

210

µm


Bonding Pad Diameter

150

µm

For p-pad

Note: The structure of PIN PD is planar and front illuminated with P electrode on the top and N electrode on the bottom.


Absolute Maximum Rating


Parameter

Rating

Electrostatic Discharge (HBM)

>1200V

Reverse Current

-10mA

Forward Current

10mA

Reverse Voltage

-20V

Operating Temperature

-40 to 85 C

Storage Temperature

-40 to 125 C

Attention:

Handle with care, InP is a brittle material. The device can be permanently damaged when exposed to ESD. Specifications are subject to change without notice.

Application

● Fiber communication

● Fiber sensor



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