10~20 GHz 1310/1550 nm Microwave Distributed Feedback (DFB) Laser(Above 10G)


Microwave Distributed Feedback (DFB) Laser provides exceptional performance for linear fiber optics communications in very wide bandwidth applications. ML1001 linear fiber optic lasers are an excellent alternative to using coaxial cable systems to transmit 10 MHz to 18 GHz signals. They offer significant improvements in reliability of microwave communications networks by transmitting the RF signal in its original format. As a result of these properties, laser products provides significant improvements in signal quality for a wide variety of applications including antenna remoting, telemetry, timing and reference signal distribution, measurement and delay line.


Product model



Name Model Price
20GHz 1310nm DFB laser module   [PDF]  [RFQ]

LP-ML1001D-31-FA
Stock NO.: A80012274
USD 3500.00 
 
15GHz 1310nm DFB laser module   [PDF]  [RFQ]

LP-ML1001B-31-FA
Stock NO.: A80012272
USD 2300.00 
 
10GHz 1310nm DFB laser module   [PDF]  [RFQ]

LP-ML1001A-31-FA
Stock NO.: A80012271
USD 1700.00 
 
10GHz 1550nm DFB laser module   [PDF]  [RFQ]

LP-ML1001A-55-FA
Stock NO.: A80012275
USD 1700.00 
 
18GHz 1310nm DFB laser module   [PDF]  [RFQ]

LP-ML1001C-31-FA
Stock NO.: A80012273
USD 2800.00 
 


Parameter



Features

● High-Dynamic-Range

● 10 MHz to 18 GHz Bandwidth

● Low threshold current

● High output power

● 7pin butterfly package with SMA connector

● Operating case temperature: -40 to 85 °C

● High reliability

E/O Characteristics

Optical and Electrical Specification   (Tc=25°C)

Parameter

Symbol

Min

Typ

Max

Units

Note

Optical Output Power

P

6

8


dBm

1

Thershold current

Ith


10


mA

-

Operation current

Iop


55

100

mA


Operation voltage

Vop


1.5

2.5

V

-

Peak wavelength

λ

-

1310

-

nm


Slope efficiency

SE

0.2



W/A


Side-mode suppression ratio

SMSR

30



dB


Rative Intensity Noise

RIN


-150

-130

dB/Hz


Bandwidth (-3dB,I=60mA)

S21


18


Ghz

-

Return loss

S11


-10

-6

dB


Input 1 dB Compression



18


dBm


Thermistor Resistance

Rth


10


Kohm

@25C

TEC current

It



1.2

A

2

TEC voltage

Vt



2.5

V

2

Capacitance (PD)

Ct



20

pF


Monitoring current

Im

0.05


2.0

mA


Dark current (PD)

Id



50

nA


Capacitance (PD)

Ct



20

pF


Notes: All laser chips come from wafers that have been certified using a representative lot of devices that must achieve an acceptable yield for burn-in. 

1. Laser temperature set 25C, bias current at 55mA; 2. Operation case temperature -5~75C


Performance Specifications

Absolute   Maximum Ratings

Parameter

Symbol

Min.

Max.

Unit

Laser diode forward current

If


120

mA

Laser diode reverse voltage

V


1

V

Front power

Pf


20

dBm

PD reverse voltage

V


15

V

Forward current (PD)

Im


2

mA

Operation temperature

To

-40

+85

°C

Storage temperature

Ts

-40

+85

°C

Storage relative humdity

Sr


85

%


Typical Data

602095738fc38.jpg

Dimensions and Pin definitions

Outline drawings

8O}9S_U7GM_1GIZBEWOF20J.jpg


Lead#

Function

Lead#

Function

1

Thermistor

6

TEC (+)

2

Thermistor

7

TEC (-)

3

LD (-)

8

LD-(RF)

4

PD (+)

9

LD+/GND

5

PD (-)




Application

● Antenna Remoting

● Cellular and PCS Networks

● Military Communications

● Tracking, Telemetry, and Control



Related




By using this website and services, you agree to our use of cookies. Cookies enable us to better provide member services and record your browsing records in a short time. OK Learn more
close[X]
Your shopping cart
Model Quantity Price Subtotal
Total price:USD:0
View shopping cart Settlement