InGaAs and InGaAsP single-photon avalanche diode (SPAD) chips with 4×4 and 8×8 array specifications are dedicated chips for short-wave infrared single-photon detection, counting and imaging. In the Geiger working mode, each pixel of the chip operates independently and freely, and is mainly used to detect weak light signals in the near-infrared band range of 0.9~1.7μm and 0.95~1.25μm.
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