Φ3mm Low Capacitance InGaAs PD photodetector     


Φ3mm low capacitance InGaAs PD photodetector is optimized for reducing capacitance of large photosensitive area photodiodes (commonly called MPD). It has the characteristics of high responsivity, high bandwidth, high reliability, etc. The spectral response range is 0.9~1.7μm, which can meet the needs of Laser warning, lidar, photoelectric sensing, optical power meter and other application requirements.



Product model


Name Model Price
Φ3mm Low Capacitance InGaAs PD photodetector   [PDF]  [RFQ]

PL-LC-1700-IG-AR3-TO8
(Stock NO. Not entered)
[Please inquire]


Parameter



Features

● Front-facing planar structure, providing bare die or TO packaged devices

● Low capacitance

● Low dark current

● High reliabilit

E/O Characteristics

Parameter

Symbol

Unit

Measurement   conditions

Min.

Typ.

Max.

Photosensitive   surface diameter

Φ

μm


3000

Reverse   breakdown voltage

VBR

V

ID=10uANo light

10

-

-

Responsiveness

R1064

A/W

λ=1.06µmV=   -5V

0.60

0.65

-

R1550

A/W

λ=1.55µmV=   -5V

0.95

1.05

-

Response   time

tr

ns

RL   = 50ΩVR = -5V


17


-3dB   Bandwidth

f-3dB

MHz

RL   = 50ΩVR = -5V


20


Capacitance

C

pF

f   = 1MHzR= 50ΩVR = -2V


150


Dark   current

ID

nA

VR   = -5VNo light


5



Absolute Maximum Ratings

Item

Parameters/Symbols

Rating

Absolute maximum ratings

Storage temperatureTstg

60~125

Working temperatureTc

40~85

Soldering temperature (only pin soldering 5s), Tp

260

Forward current, IF

100mA

Average photocurrentIp

100mA

Total power consumptionPtot

100mW

Incident optical power densityΦin

200kW/cm²


Dimensions and Pin definitions

Unit (mm)

PD1.png

Application

● Laser alarm

● Optical power meter

● Lidar

● Instrumentation



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