10 mm x 10 mm Ge Photodiode     


Germanium photodiodes are commonly used to measure optical power in the NIR range, especially in cost-sensitive applications or where a large-area detector is needed. However, germanium detectors have a lower shunt resistance and higher dark current than similarly-sized InGaAs detectors, resulting in higher noise levels overall. Therefore, germanium detectors are well suited for applications where the signal being detected is much higher than the noise floor. GPD Optoelectronics offers an"HS" series of germanium photodiodes which have higher-than-typical shunt resistance for improved performance.



Product model


Name Model Price
10 mm x 10 mm Ge Photodiode   [PDF]  [RFQ]

LP-GE-10X10
Stock NO.: E80040502
[Please inquire]


Parameter



Features

● Chip diameters from 1 mm to 25 mm

● Spectral response from 800 nm to 1800 nm

● High linearity > 10 dBm

● Multiple window and lens options

● Optical filters available (neutral density, bandpass, etc.)

● Thermoelectric cooling options

● Wide packaging variety: TO packages, BNC options, chip on ceramic submount, and more

Specifications

Specificationsa

Sensor Material

Ge

Wavelength Range

800   - 1800 nm

Peak Wavelength

1550 nm   (Typ.)

Responsivityb

0.95 A/W   (Typ.)

Active Area

100 mm2 (10 mm x 10 mm)

Rise/Fall Time (RL = 50 Ohms, 1 V)

10 µs (Typ.)

NEP (1550 nm)c

4.0 x 10-12  W/Hz1/2 (Typ.)

Dark Current (0.3 V)

50 µA (Max)

Capacitance

80 nF (Typ.) @ 1 V
  135 nF (Typ.) @ 0 V

Shunt Resistance

2000  Ohm (Typ.)

Package

Ceramic


Max Ratings

Max Bias (Reverse) Voltage

1 V

Reverse Current

10 mA

Operating Temperature

-40 to 85 °C

Storage Temperature

-40 to 125 °C

Note: Unless otherwise noted, all measurements are performed at 25 °C ambient temperature.

Responsivity Specified at the Peak Wavelength

NEP is Specified for the Photovoltaic Mode


Responsivity Spectrum

t1.png

Dark Current

t2.png

This is a sample curve of the dark current. Actual performance will vary from photodiode to photodiode. Do not exceed the 1 V maximum reverse bias voltage.

Dimension

t3.png

Application

● Optical power meters

● LED/LD characterization and burn-in diagnostics

● Spectroscopy

● LED/LD characterization

● Eye-safe laser detection sensors



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