1060nm High Gain Semiconductor Optical Amplifier     


The PL-HG-SOA-C-A81-W1060-SASA 1060nm Semiconductor Optical Amplifier (SOA) is single-pass, traveling-wave amplifier that perform well with both monochromatic and multi-wavelength signals.



Product model


Name Model Price
1060nm PM High Gain Semiconductor Optical Amplifier   [PDF]  [RFQ]

PL-PG-SOA-A-A82-W1060-PAPA
(Stock NO. Not entered)
[Please inquire]
1060nm SM High Gain Semiconductor Optical Amplifier   [PDF]  [RFQ]

PL-PG-SOA-A-A82-W1060-SASA
(Stock NO. Not entered)
[Please inquire]


Parameter



Features

● Ultra high gain > 40dB at 1060nm 

● High saturation output power > 20dBm

● Low ripples

● Strong linear polarization 

● RoHS compliance 

E/O Characteristics

Test conditions: CW operation, chip temperature 25°C, the case is mounted on room temperature heatsink

Parameters

Min.

Typ.

Max.

Unit

Operating current (Iop)


450

500

mA

Forward voltage @ Iop


1.7

2

V

Gain(with input signal -25dBm)

Small signal gain

28

32


dB

Gain mean wavelength

1045

1060

1075

nm

Gain bandwidth @ -3dB

70

90


nm

Gain saturation output power @ -3dB

15

18


dBm

Noise figure


6


dB

Amplified Spontaneous Emission (ASE)

ASE optical power ex fiber from each port


7


mW

ASE mean wavelength


1050


nm

ASE bandwidth @ -3dB

80

90


nm

ASE spectrum ripples³ (RMS in 1nm   range, 10pm resolution)


0.02

0.2

dB

ASE polarization extinction ratio (PER) at each   port

14

17


dB


TYPICAL SOA PARAMETERS vs. OPERATING CURRENT

Test conditions: CW operation, input signal -25dBm, chip temperature 25°C, case temperature 25°C

OperatingCurrent, mA

Gain, dB

Gain bandwidth @ -3dB, nm

Saturation output power @ -3dB, dBm

Ripples RMS, dB

200

37

20

14

0.01

400

40

23

18

0.02

600

42

26

20

0.03

800

43

28

22

0.04


SOA Power Amplification Comparison(25deg,Pin=10dBm,I=400mA) 

Parameters

Min.

Max.

Unit

SOA reverse voltage

-

2

V

SOA CW forward current

-

800

mA

Input optical power

-

20

dBm

Thermo Electric Cooler current

-

3

A

Thermo Electric Cooler voltage

-

4

V

Fiber bend radius

3

-

cm

Chip operating temperature range

10

40

°C

Case operating temperature range

0

70

°C

Storage temperature range

-40

85

°C


SOA Power Amplification Comparison(25deg,Pin=10dBm,I=400mA) 

soa1.png


SOA ASE Spectrum(25deg,I=400mA)

soa2.png


SOA Characteristic Graph(25deg,Pin=10dBm)

soa3.png

Dimensions and Fiber definitions

t1.png


NO.

Function

NO.

Function

1

Thermoelectric Cooler (+)

8

N/C

2

Thermistor

9

N/C

3

NC

10

SOA Anode (+)

4

NC

11

SOA Cathode (–)

5

Thermistor

12

N/C

6

N/C

13

Case

7

N/C

14

Thermoelectric Cooler (-)


Application

● Swept-source, tunable lasers

● Booster optical amplifiers

● Optical preamplifiers

● Optical coherence tomography (OCT)

Ordering Info

PL-HP-SOA-☆-A8▽-W□□□□-XX

☆ :Output Power

A:10db

B:15db

C:20dB

▽:Bandwidth

1: 60-70nm

2: 30-40nm

□□□□:Wavelength

780:680nm

850:850nm

*****

1060:1060nm

1550:1550nm

XX: Fiber and Connector Type

SASA=(SMF-28E+ FC/APC)+(SMF-28E+ FC/APC)

SPSP=(SMF-28E+ FC/PC)+(SMF-28E+ FC/PC)

PAPA=(PM Fiber+ FC/APC)+(PM Fiber+ FC/APC)

PPPP=(PM Fiber+ FC/PC)+(PM Fiber+ FC/PC)

PAPA=(PM Fiber+ FC/APC)+(PM Fiber+ FC/APC)



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