Φ1mm InGaAs Quadrant PIN Detector

PL-1700-IG-QD1-TO InGaAs Quadrant PIN Detector, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 4x1mm in diameter. Planar-passivated device structure.

Name	Model	Description	Parameter	Price
1mm InGaAs Quadrant PIN Detector [PDF] [RFQ]	PL- 1700-IG-QD1-TO5 Stock NO.: E80040016	Response Spectrum 850~1700nm, Active diameter 4x1mm, Response Time 0.5ns, Package TO5	Response wavelength: 850-1700nm Material: InGaAs Active area: 4x1mm Package: TO-5 Lead Time: in stock	[Please inquire] Call us

Name

Model

Description

Parameter

Price

1mm InGaAs Quadrant PIN Detector [PDF] [RFQ]

PL- 1700-IG-QD1-TO5
Stock NO.: E80040016

Response Spectrum 850~1700nm, Active diameter 4x1mm, Response Time 0.5ns, Package TO5

Response wavelength: 850-1700nm

Material: InGaAs

Active area: 4x1mm

Package: TO-5

Lead Time: in stock

[Please inquire]

Call us

Parameter

Features

● Top illumination planar PD

● Narrow Element gap,

● Low Crosstalk,High reliability

● Good Reponsivity homogeneity of each Quadrant

E/O Characteristics

Tsub=25°C, CW bias unless stated otherwise

Parameters	Sym.	Test conditions	Min	Typ	Max	Unit
Response Spectrum	λ	V_R=5V	850~1700			nm
Active diameter	φ	-	4x1			mm
Element gap	d		40			um

Reponsivity	R_e	λ=1.31µm,VR=5V,Pin =10µw	0.80	0.85		A/W
Reponsivity	R_e	λ=1.55µm,VR=5V,Pin =10µw	0.90	0.95		A/W
Reverse breakdown voltage	V_BR	I R =10µA	35			V
Dark current	I_D	V R =5V		0.5	1.0	nA
Total capacitance	C	V R =5V			1.5	nF
Crosstalk	S_L	V R =5V			2	%
Max linear power	Φs	VR =5V, λ=1.55μm	5	-	-	mW
-3dB bandwidth	BW	VR=5V,λ=1.55μm，RL=50Ω	120	-	-	MHZ

Typical characteristical curve

Responsivity, R (A/W)

Wavelength, λ (nm)

P-I Curve

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Application electric circuit

Dimensions and Pin definitions

1	2nd Quadrant P +	4	4th Quadrant P +
2	1st Quadrant P +	5	3rd Quadrant P +
3	GND	6	Common N- Pole

Absolute Maximem Ratings

Operating voltage	5V	Operating temperature	-50~+85℃	Power dissipation	100mW
Forward current	10mA	storage temperature	-55~+125℃	Soldering temperature	260℃（10s）

Application

● Laser guidance

● Laser positioning

● Laser navigation

● Laser range finder

Ordering Info

PL-□□□□-☆-QD▽-XXX

□□□□: Cut off Wavelength

400: 400nm

900: 900nm

1700: 1700nm

2100: 2100nm

2400: 2400nm

2700: 2700nm

☆: Material

IG: InGaAs

Si: Si

▽: Active Area(Single element)

1: 1mm

2: 2mm

….

3: 3mm

XXX: Package/Fiber and Connector Type

TO: TO46 Package

FSA=SMF-28E Fiber coupled+ FC/APC

FSP=SMF-28E Fiber coupled + FC/PC

FPP=PM Fiber Fiber coupled + FC/PC

FPA=PM Fiber Fiber coupled + FC/APC

User Safety

Safety and Operating Considerations

This device operates under reverse bias voltage, and the polarity of the device can’t be reversed.

Operating the Photodiode outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used with this component cannot exceed maximum peak optical power.

ESD PROTECTION—Electrostatic discharge (ESD) is the primary cause of unexpected laser diode failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces, and rigorous antistatic techniques when handling Photodiodes.

Φ1mm InGaAs Quadrant PIN Detector

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