16mm SI Quadrant PIN Detector

PL-1100-SI-QD16-TO SI Quadrant PIN Detector, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 400 nm to 1100 nm. The photosensitive area is 16mm x 4 in diameter. Planar-passivated device structure.

Name	Model	Description	Parameter	Price
10mm SI Quadrant PIN Detector [PDF] [RFQ]	PL-1100-SI-QD10-TO Stock NO.: E80040002	Response wavelength 400nm to 1100nm, Response 0.3A/W@1064nm, Active Area Diameter 10mm, Photosensitive material Si	Material: Si Active area: 10mm Lead Time: 3-4 weeks	[Please inquire] Call us
16mm SI Quadrant PIN Detector [PDF] [RFQ]	PL-1100-SI-QD16-TO Stock NO.: E80040004	Response wavelngth 400nm to 1100nm, Response 0.3A/W@1064nm, Active Area Diameter 16mm, Photosensitive material Si	Material: Si Active area: 16mm Lead Time: 3-4 weeks	[Please inquire] Call us

Name

Model

Description

Parameter

Price

10mm SI Quadrant PIN Detector [PDF] [RFQ]

PL-1100-SI-QD10-TO
Stock NO.: E80040002

Response wavelength 400nm to 1100nm, Response 0.3A/W@1064nm, Active Area Diameter 10mm, Photosensitive material Si

Material: Si

Active area: 10mm

Lead Time: 3-4 weeks

[Please inquire]

Call us

16mm SI Quadrant PIN Detector [PDF] [RFQ]

PL-1100-SI-QD16-TO
Stock NO.: E80040004

Response wavelngth 400nm to 1100nm, Response 0.3A/W@1064nm, Active Area Diameter 16mm, Photosensitive material Si

Material: Si

Active area: 16mm

Lead Time: 3-4 weeks

[Please inquire]

Call us

Parameter

Features

● Top illumination planar PD

● Narrow Element gap,

● Low Crosstalk,High reliability

● Good Reponsivity homogeneity of each Quadrant

E/O Characteristics

Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)

Parameters	Symbol	Test Condition （TA=22℃±3℃）		Value		Unit
Parameters	Symbol	Test Condition （TA=22℃±3℃）		Min	Max	Unit
Response(AC)(Quadrant)	Spi	λ=1.064μm VR=135 V	Pulse Width 20 ns、Pin=2 mW	0.25	—	A/W
Response(DC)(Quadrant)	Rei		DC、Pin=1μw	0.30	—	A/W
Response variation (DC) (Quadrant)a Response variation (AC) (Quadrant)a	ΔRei		TA=-45 ℃±2 ℃	—	50	%
Dark Current(Quadrant)	IDi	VR=135V Pin=0μw	TA=22℃±3℃	—	1	μA
Dark Current(Quadrant)	IDi		TA=70℃±3℃	—	10
Dark Current(RING)	ID		TA=22℃±3℃	—	10
Dark Current(RING)	ID		TA=70℃±3℃	—	100
Junction capacitance（Quadrant）	Cji	VR=135V，f=1MHz		—	15	pF
Active Area Diameter	φ			10	16	mm
Equivalent noise power	NEPi	λ=1.064 μm，VR=135 V ,Pulse Width 20 ns		—	5×10-12	W/HZ1/2
Breakdown voltage（Quadrant、Ring）	VBR	IR=10μA		200	—	V
Nonuniformity of sensitivity between pixels	Rf	λ=1.064 μm，VR=135 V ，Pulse Width 20 ns；Pin=2mW		—	5	%
Nonuniformity of sensitivity in pixels	Rfn	λ=1.064 μm，VR=135 V ，Pulse Width20 ns；Pin=2mW		—	5	%
Crosstalk Factor between pixels	SLi	λ=1.064 μm，VR=135 V ，Pulse Width 20 ns；Pin=2mW		—	5	%

Typical characteristical curve

Dimensions and Pin definitions

Dimension Outline

TO Type Full sealed design. Outline reference Figture1,Dimension Reference table1

Table 1, Dimension (Unit in mm)

SYB	φD1	ΦD2	ΦD3	ΦD4	ΦD5	Φd	A	L1	L2	L3	e
Min	30.55	27.80	3.00	27.915	22.60	0.98	7.03	3.02	1.85	2.70	18.00
Max	30.65	28.00	3.06	27.94	23.40	1.02	7.20	3.10	1.95	3.00	18.05

PIN Output Array

Pin output array reference Figure 2,PIN Function Reference Table 2.

Table2,PIN Output Array function

PIN#	Function	Voltage polarity
1	Quadrant1	+
2	Common P polarity	-
3	Quadrant4	+
4	Ring	+
5	Quadrant3	+
6	Cell	GND
7	Quadrant2	+

Application

● Laser beam position sensor

● Autocollimators

● Optical tweezers

● Ellipsometers

Ordering Info

PL-W□□□□-☆-QD▽-XX

□□□□: Cut off Wavelength

400: 400nm

900: 900nm

1100: 1100nm

2100: 2100nm

2400: 2400nm

2700: 2700nm

☆ : Material

IG: InGaAs

Si: Si

▽: Active Area(Single element)

10: 10mm

16: 16mm

XX: Package/Fiber and Connector Type

TO: TO Can Package

FSA=SMF-28E Fiber coupled+ FC/APC

FSP=SMF-28E Fiber coupled + FC/PC

FPP=PM Fiber Fiber coupled + FC/PC

FPA=PM Fiber Fiber coupled + FC/APC

User Safety

Safety and Operating Considerations

This device operates under reverse bias voltage, and the polarity of the device can’t be reversed.

Operating the Photodiode outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used with this component cannot exceed maximum peak optical power.

ESD PROTECTION—Electrostatic discharge (ESD) is the primary cause of unexpected laser diode failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces, and rigorous antistatic techniques when handling Photodiodes.

16mm SI Quadrant PIN Detector

Product model

Parameter

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