LD-PD INC HC50100C1.5 high power distributed feedback laser (DFB) is a CW InP MQW laser diode. It shows high thermal stability, high side-mode suppression ratios (SMSR), and low relative intensity noise (RIN).
Name | Model | Description | Parameter | Price |
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● Center wavelength at C-band
● More than 100mW Output power
● Single transverse mode
● Compliant with ROHS
Electro-Optical Characteristics(T=25℃, unless noted otherwise)
Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
Threshold Current | Ith | CW | 15 | mA | ||
Slope Efficiency | η | If=Ith+5mA to Ith+100mA | 0.25 | 0.4 | W/A | |
Front Power | Pf | bar-tester, CW | 50 | mW | ||
80 | mW | |||||
100 | mW | |||||
Forward Voltage | Vf | If≤400mA | 3.0 | V | ||
Series Resistance | R | Slope between I1=40mA, I2=50mA | 8 | Ohms | ||
Wavelength/temperature coefficient | CW | 0.098 | nm/℃ | |||
Peak Wavelength | λp | If, C-band | ITU-C | nm | ||
Side Mode Suppress Ratio | SMSR | Po=Pf | 35 | dB | ||
Beam Divergence Angle (Horizontal, FWHM) | θh | If=Ith+20mA | 22 | 30 | deg | |
Beam Divergence Angle (Vertical, FWHM) | θv | If=Ith+20mA | 23 | 30 | deg | |
RIN | RIN | If=IOP | -150 | dB/Hz |
Absolute maximum ratings
Parameter | Symbol | Min. | Typ. | Max. | Unit |
Forward Current (LD) with TEC | If | 500 | mA | ||
Reverse Voltage (LD) | Vr | 2 | V | ||
Operating Case Temperature Under TEC control package | Top | -10 | 60 | ℃ | |
Storage Temperature Package | Tstg | -20 | 65 | ℃ | |
Storage Relative Humidity | RH | 85 | % | ||
Solder Reflow Temperature (10sec max) | Ts | 300 | ℃ |
Outline Drawing (unit: mm)
The maximum cavity length is 1500um. Unless otherwise specified, the standard cavity length is 1200um
Parameter | Symbol | Value | Unit |
Cavity Length | L | ≤1500 | µm |
Width | W | 250±10 | µm |
Chip Thickness | H | 110±15 | µm |
COC form
COC top view
COC section view
Cautions:
1.LD chips are relatively sensitive, so avoid touching the cavity surface and ridge waveguide.
2. The packaging material can use an anti-static protective layer, and degradable materials cannot be used. It must comply with ROHS and REACH environmental protection requirements. Materials that release chemicals during degradation and cause chip contamination should not be used.
3. Chip storage boxes and transport tools should be cleaned regularly. They should be stored in sealed bags and containers for long-term transportation, and the chips must always be placed in containers and taken out when needed.
4. The conditions for using the chip storage cabinet are as follows:
(1) Relative humidity in the cabinet: 7%~30%;
(2) Number of suspended particles: in accordance with GB/T 25915.1-2010;
(3) Purification gas: 99% nitrogen or dry air;
(4) Temperature: 17℃~28℃.
5. Environmental requirements: Conditions for long-term storage of chip cabinets or containers:
(1) Purified gas: 99% nitrogen or inert gas (purity greater than 99.5%);
(2) Temperature: 17℃~25℃;
(3) Relative humidity: 7%~25% (anti-static accumulation/anti-condensation and moisture ingress);
(4) ESD level: ≥150V;
(5) Gas pressure: slightly higher than ambient atmospheric pressure
6. The chip is adhered to the blue film, and the adhesion between the chip and the blue film is moderate to ensure that: the chip does not fall off, and the chip is not too tightly adhered to be difficult to remove and thus damaged.
7. During transportation, moisture-proof packaging is added outside the standard anti-static packaging. The chip is sealed in an anti-static vacuum bag, and the vacuum bag and anti-static shock-absorbing materials are placed in the inner packaging box together, and the product certification mark is placed on the packaging box; the inner packaging box and the shock-absorbing materials are placed in the outer transport packaging box, and then the final mark of the product certification is placed on the packaging box; the carton is made of insulating material.
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