Φ5mm Large active area InGaAs Photodiode

Large area, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 5 mm in diameter. Planar-passivated device structure.

Name	Model	Description	Parameter	Price
3mm InGaAs Photodiode [PDF] [RFQ]	PL-1700-IG-AR3-TO5 Stock NO.: E80042007	Response wavelngth 900-1700nm, Lager active diameter, Low noise, High reliability, TO5 Package	Response wavelength: 900-1700nm Material: InGaAs Active area: 3mm Package: TO-5 Lead Time: in stock	[Please inquire] Call us
5mm InGaAs Photodiode [PDF] [RFQ]	PL-1700-IG-AR5-TO8 Stock NO.: E80042008	Response wavelngth 900-1700nm, Lager active diameter, Low noise, High reliability, TO8 Package	Response wavelength: 900-1700nm Material: InGaAs Active area: 5mm Package: TO-8 Lead Time: in stock	[Please inquire] Call us

Name

Model

Description

Parameter

Price

3mm InGaAs Photodiode [PDF] [RFQ]

PL-1700-IG-AR3-TO5
Stock NO.: E80042007

Response wavelngth 900-1700nm, Lager active diameter, Low noise, High reliability, TO5 Package

Response wavelength: 900-1700nm

Material: InGaAs

Active area: 3mm

Package: TO-5

Lead Time: in stock

[Please inquire]

Call us

5mm InGaAs Photodiode [PDF] [RFQ]

PL-1700-IG-AR5-TO8
Stock NO.: E80042008

Response wavelngth 900-1700nm, Lager active diameter, Low noise, High reliability, TO8 Package

Response wavelength: 900-1700nm

Material: InGaAs

Active area: 5mm

Package: TO-8

Lead Time: in stock

[Please inquire]

Call us

Parameter

Features

● Top illumination planar PD

● Lager active diameter、

● Low noise,High reliability

E/O Characteristics

Tsub=25°C, CW bias unless stated otherwise

Parameters	Sym.	Test conditions	Min	Typ	Max	Unit
Response Spectrum	λ	-	900~1700			nm
Active diameter	φ	-	5000			um
Reponsivity	Re	λ=1.31µm,VR=5V,Pin =10µw	0.75			A/W
Reponsivity	Re	λ=1.55µm,VR=5V,Pin=10µw	0.80			A/W
Reverse breakdown voltage	VBR	I R =10µA	20			V
Dark current	ID	VR =5V			200	nA
Total capacitance	C	VR =5V f=1MHz			1.5	nF
Shunt impedance	RSh	VR =10mV	1			MΩ

Typical characteristical curve

2345截图20180610152617_副本.png

Application electric circuit

Dimensions and Pin definitions

Absolute Maximem Ratings

Operating voltage	10V	Operating temperature	-50~+100℃	Power dissipation	100mW
Forward current	10mA	storage temperature	-55~+125℃	Soldering temperature	260℃（10s）

Application

● Optical power meter,

● Response spectrum testing,

● Space light detect equipment

Ordering Info

PL-□□□□-☆-AR▽-XX-TO (PL-1700-IG-AR5-FSA-TO)

□□□□: Cut off Wavelength

400: 400nm

900: 900nm

1700: 1700nm

2100: 2100nm

2400: 2400nm

2700: 2700nm

☆: Material

IG: InGaAs

Si: Si

▽: Active Area

1: 1mm

2: 2mm

….

5: 5mm

XX: Package/Fiber and Connector Type

FSA=SMF-28E Fiber coupled+ FC/APC

FSP=SMF-28E Fiber coupled + FC/PC

FPP=PM Fiber Fiber coupled + FC/PC

FPA=PM Fiber Fiber coupled + FC/APC

TO: TO46 Package

Φ5mm Large active area InGaAs Photodiode

Product model

Parameter

Related