PL -VCSEL-0795-1-A8X-TO46 794.7nm VCSEL is a vertical emitting MOVPE grown GaAsP/AlGaAs Single Mode diode laser. The chips are mounted in TO5 can. Wavelength tuning can be achieved via laser current and temperature tuning. package with TEC and PD Built in. It is special designed for TDLAS Application. Good Narrow linewidth and wide tunability with TEC made it a great low cost choice for Rubidium Spectroscopy D1 transition.
Product model
Name
Model
Description
Parameter
Price
Parameter
Features
● Vertical Cavity Surface-Emitting Laser
● Internal TEC and Thermistor, ESD protection
● Narrow linewidth
● 2 nm tunability with TEC
● Selection for Rubidium D1 transition
E/O Characteristics
Condition:TO P = 20°C, IO P = 2.0 mA unless otherwise stated (TO P = chip backside temperature, controlled by the TEC)
Parameters
Symbol
Min
Typ
Max
Unit
Remark
Emission Wavelength
λR
794.7nm
Threshold current
ITH
0.5
mA
Output Power
Popt
0.25
mW
Threshold Voltage
UTH
1.8
V
Driving Current
IOP
2
mA
Popt = 0.3 mW
Laser voltage
UOP
2
V
Popt = 0.3 mW
Electro optic conversion rate
ηWP
12
%
Popt = 0.3 mW
Slope efficiency
ηS
0.3
W/A
Differential series resistance
RS
250
Ω
Popt = 0.3 mW
3dB bandwidth
ν3dB
0.10
GHz
Popt = 0.3 mW
Due to ESD protection diode
Relative intensity noise
RIN
-130
-120
dB/Hz
Popt = 0.3 mW @ 1 GHz
Wavelength tuning over current
0.6
nm/mA
Wavelength tuning over temperature
0.06
nm/K
Thermal resistance (VCSEL chip)
Rthermal
3
5
K/mW
Side mode supression
25
dB
I = 2 mA
Beam divergence
θ
10
25
°
Popt = 0.3 mW,full width 1/e2
Spectral Width
100
MHz
Popt = 0.3 mW
Tec Characteristics
Unit
Min
Typ
Max
Remark
Tec Current
mA
-150(Heating)
+300(Cooling)
Proper Heart Sink Required
NTC Thermistor Resistance
KΩ
9.5
10.0
10.5
T=25℃@10 KΩ
NTC Thermistor Resistance
KΩ
10/exp{3892-(1/289K-I/TOP)}
Spectrum
L-I Curve(T@25°C)
Temperature / wavelength tuning over TEC current*
Fabry Perot Spectrum
Package Size
（Dimensions Unit in: mm）
Pin definition
Bottom View
1
Case
4
VCSEL+
2
Rth
5
TEC-
3
TEC+
6
VCSEL-/Rth
Absolute Maximum Ratings
Item
Symbol
Unit
Min
Typ
Max
Testing Condition
Chip Temperature
TOP
℃
+10
25
40
Forward Voltage
VR
V
0.8
1.2
1.8
Electrical Power Dissipation
Pc
mw
-
5
TEC Forward Current
IPF
mA
-150
-
+300
Lead Soldering time
S
-
10s
260℃
Store Temperature
TSTG
℃
-40
-
+85
2000hr
Operating Temperature
TOP
℃
-55
-
+125
(*TEC temperature must be below 150°C)
Application
● Tunable diode laser absorption spectroscopy
● Rubidium Spectroscopy
● Optical Clock (Rubidium)
Ordering Info
PL -VCSEL-□□□□-☆-A8▽-XX
□□□□：Wavelength
0760:760nm
0795:794.7nm
*****
1653.7：1653.7nm
☆ ：TEC
0：Without TEC
1：With TEC
▽：Wavelength Tolerance
1：±0.5nm
2：±1.5nm
XX: Package
TO46
User Safety
Safety and Operating Considerations
This device operates under reverse bias voltage, and the polarity of the device can’t be reversed.
Operating the Photodiode outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used with this component cannot exceed maximum peak optical power.
ESD PROTECTION—Electrostatic discharge (ESD) is the primary cause of unexpected laser diode failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces, and rigorous antistatic techniques when handling Photodiodes.
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