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    • Large Area InGaAs/InP PIN Photodiode Chip     


    LD-PD's  InGaAs pin structure based on InP by MOCVD method and planar diffusing technology. The sensitive areas of TO photodiode series products are φ5mm、φ10mm、φ15mm respectively. The products with other sensitive area, shape or package style can also be provided according to the demand of users.



    Product model


    Name Model Price
    10mm Diameter InGaAs PIN Photodiode Chip   [PDF]  [RFQ]

    LP-PD-D10
    (Stock NO. Not entered)     		[Please inquire]
     Call us 


    Parameter



    Features

    ● 10mm Active diameters

    ● High responsivity

    ● Low capacitance

    ● Low dark current

    ● High shunt resistance

    Specifications

    Specification   (Tc=25℃)

    Parameter

    Symbol

    Min

    Typ

    Max

    Unit

    Test Conditions

    Response range

    λ

    900


    1650

    nm


    Responsivity

    R

    0.85

    0.90


    A/W

    λ=   1310nm


    0.95


    λ=   1550nm


    0.2


    λ=850nm

    Dark current

    ID


    15

    100

    nA

    VR=-2V

    Capacitance

    C


    12


    nF

    VR=0V, f= 1MHz


    Absolute Maximum Ratings

    Parameter

    Symbol

    Value

    Unit

    Reverse voltage

    VRmax

    5

    V

    Forward Current


    10

    mA

    Operating temperature

    Topr

    -40 to +85

    ℃

    Storage temperature

    Tstg

    -55 to +125

    ℃


    Dimension Parameter

    Parameter

    Symbol

    Value

    Unit

    Active area diameter

    D

    10

    mm

    Bond pad diameter

    -

    200

    µm

    Die size

    -

    10300*10300

    µm

    Die thickness

    t

    200±20

    µm


    Dimension

    LAI1.png

    Application

    ● Monitoring

    ● Fiber-optic Instruments

    ● Data Communications



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