O-Band Semiconductor Optical Amplifier Chips, Non-linear

An SOA (Semiconductor Optical Amplifier) is a semiconductor element that amplifies light. Antireflective processing is applied on both facets of a semiconductor laser to eliminate the resonator structure. When light enters from outside the semiconductor, the light is amplified by stimulated emission.SOA is used for amplifying an optical signal. SOAs are included in the optical transceiver modules used for communication between data centers to amplify the optical signal in the 1.3 um band used for Ethernet communication in order to compensate for transmission loss.

LD-PD provides SOA modules that have high optical gain of 15 dB or higher and a low noise figure of 7 dB or less. The polarization dependent gain is also 1.5 dB or less, which enables signal amplification with practically no problem.

Name	Model	Description	Parameter	Price
O-Band Semiconductor Optical Amplifier Chips [PDF] [RFQ]	PL-SOA--B-2-1310-BC Stock NO.: I80050001	Center Wavelength 1310nm; Output Power >18dbm; Bandwidth 40-60nm, Min Qty 10pcs	Central wavelength: 1310nm SOA Gain: ﹥18dB Lead Time: in stock	[Please inquire] Call us

Name

Model

Description

Parameter

Price

O-Band Semiconductor Optical Amplifier Chips [PDF] [RFQ]

PL-SOA--B-2-1310-BC
Stock NO.: I80050001

Center Wavelength 1310nm; Output Power >18dbm; Bandwidth 40-60nm, Min Qty 10pcs

Central wavelength: 1310nm

SOA Gain: ﹥18dB

Lead Time: in stock

[Please inquire]

Call us

Parameter

Features

● Wide Optical Bandwidth

● High Output Power

● Low Polarization Sensitivity

● MQW or Bulk Structure

E/O Characteristics

Electrical/Optical Characteristics(Tsub=25°C, CW bias unless stated otherwise)

Parameter	Symbol	Test condition	Min.	Typ.	Max.	Unit
Beam Angle	Ang	IF=120mA, Tc=25°C & Tc=40°C	—	26.5	—	°
Center wavelength	λ C	IF=120mA, Tc=25°C	—	1280	—	nm
Center wavelength	λ C	IF=120mA, Tc=40°C	—	1290	—	nm
Operation Current	Iop	Tc=25C & Tc=40°C	100	120	150	mA
Forward Voltage	Vf	IF=120mA, Tc=25C & Tc=40°C	—	1.2	1.8	V
ASE spectrum bandwidth	BW	IF=120mA, Tc=25C @-3dB	40	—	—	nm
ASE spectrum bandwidth	BW	IF=120mA, Tc=40C @-3dB	40	—	—	nm
Gain	G	IF=120mA, λ_in=1310 nm, Pin=-25 dBm, Tc=25°C	16	18	—	dB
Gain	G	IF=120mA, λ_in=1310 nm, Pin=-25 dBm, Tc=40°C	15	16	—	dB
Noise Figure	NF	IF=120mA, λ_in=1310 nm, Pin=-25 dBm, Tc=25°C	—	7.5	—	dB
Noise Figure	NF	IF=120mA, λ_in=1310 nm, Pin=-25 dBm, Tc=25°C	—	7.5	—	dB
ASE ripple	R	IF=120mA, Tc=25C & Tc=40°C	—	0.1	0.2	dB
Polarization dependent gain	PDG	IF=120mA,λ_in=1310 nm, Pin=-25 dBm, Tc=25C & Tc=40°C	—	1.5	—	dB
Saturated output power	SOP	IF=120mA,λ_in=1310 nm, Pin=-25 dBm, Tc=25°C	7	9	—	dBm
Saturated output power	SOP	IF=120mA,λ_in=1310 nm, Pin=-25 dBm, Tc=40°C	7	8	—	dBm