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    • 1.5mm Large Area InGaAs/InP PIN Photodiode Chip     


    LD-PD's  InGaAs pin structure based on InP by MOCVD method and planar diffusing technology. The sensitive areas of TO photodiode series products are φ1.5mm、. The products with other sensitive area, shape or package style can also be provided according to the demand of users.  



    Product model


    Name Model Price

    Parameter


    Features

    ● 1.5mm Active diameters

    ● High responsivity

    ● Low capacitance

    ● Low dark current

    ● High shunt resistance

    Specifications

    Specification   (Tc=25℃)

    Parameter

    Symbol

    Min.

    Typ.

    Max.

    Unit

    Test Conditions

    Response range

    λ

    900


    1650

    nm


    Responsivity

    R

    0.85

    0.90


     A/W

    λ= 1310nm


    0.95


    λ= 1550nm


    0.2


    λ=850nm

    Dark current

    ID


    7.0

    20.0

    nA

    VR=5V

    Capacitance

    C


    125

    180

    pF

    VR=5V, f= 1MHz


    Absolute Maximum Ratings

    Parameter

    Symbol

    value

    Unit

    Reverse voltage

    VRmax

    20

    V

    Operating temperature

    Topr

    -40 to +85

    ℃

    Storage temperature

    Tstg

    -55 to +125

    ℃


    Dimension

    1.5mm Large Area InGaAs inP PIN Photodiode Chip.png

    Dimension Parameter

    Parameter

    Symbol

    value

    Unit

    Active area diameter

    D

    1500

    µm

    Bond pad diameter

    -

    120

    µm

    Die size

    -

    1750x1750

    µm

    Die thickness

    t

    180±20

    µm




    Application

    ● Monitoring

    ● Fiber-optic Instruments

    ● Data Communications



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