TDLAS DFB Laser Chip

The laser is a semiconductor InGaAsP DFB laser working at the 1625nm, 1648.2nm, 1650.9nm or 1653.7 nm wavelength range. The device can be delivered in chip forms. This high performance, and high reliability laser is suitable for gas detection application.

Name	Model	Description	Parameter	Price
1653.7nm DFB Laser Chip [PDF] [RFQ]	TDLAS-DFBCHIPS-A-A81-W1653.7 Stock NO.: I80011024	Central wavelength 1653.7nm, Output power 5.5mW, SMSR 40dB	Central wavelength: 1653.7nm Output power: 5.5mW Lead Time: in stock	[Please inquire] Call us
1650.9nm DFB Laser Chip [PDF] [RFQ]	TDLAS-DFBCHIPS-A-A81-W1650.9 Stock NO.: I80011022	Central wavelength 1650.9nm, Output power 5.5mW, SMSR 40dB	Central wavelength: 1650.9nm Output power: 5.5mW Lead Time: in stock	[Please inquire] Call us
1648.2nm DFB Laser Chip [PDF] [RFQ]	TDLAS-DFBCHIPS-A-A81-W1648.2 Stock NO.: I80011020	Central wavelength 1648.2nm, Output power 5.5mW, SMSR 40dB	Central wavelength: 1648.2nm Output power: 5.5mW Lead Time: in stock	[Please inquire] Call us
1625nm DFB Laser Chip [PDF] [RFQ]	TDLAS-DFBCHIPS-A-A81-W1625 Stock NO.: I80011018	Central wavelength 1625nm, Output power 5.5mW, SMSR 40dB	Central wavelength: 1625nm Output power: 5.5mW Lead Time: in stock	[Please inquire] Call us

Parameter

Features

● Wide temperature range available

● High Reliability

● Multi-quantum Well (MQW) active layer

E/O Characteristics

Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)

Parameter	Symbol	Min	Typ	Max	Unit
Centre Wavelength	λ	1625 1648.2 1650.9 1653.7nm
Side Mode Suppression Ratio	SMSR	30	40		dB
Threshold Current	Ith		5	10	mA
Operating Current	Iop		80	120	mA
Chip output Power	Pf	5.5	10	30	mW
Quantum Efficiency	η	0.08	0.12		mW/mA
Current Tuning Coefficient	∆λ/∆I		0.015		nm/mA
Temperature Tuning Coefficient	∆λ/∆T		0.12		nm/K
Forward Voltage	Vf		1.3	2	V
Kink deviation	KINK	30%
Beam divergence angle (parallel)	ϑ//		25		Deg
Beam Divergence angle (perpendicular)	ϑ⊥		35		Deg
Resistance	Rs		8		ohm
20dB width	△λ		1		nm

Package Size

Outline Drawing

Note: The silk screen on the pictures is only for reference .

Absolute maximum ratings

Item	Unit	Min	Typ	Max
Case Temperature	℃	-5	25	70
Chip Temperature	℃	+10	25	50
Operating Current	mA	0	80	100
Forward Voltage	V	0.8	1.2	2.0
Suggest TEC Current	A	-	-	1.2
Reverse Voltage（LD）	V	-	-	2.0
Reverse Voltage(PD)	V	-	-	20

Note：

1.Stresses which exceed the absolute maximum ratings can cause permanent damage to the device.

2.These are only absolute stress ratings . Functional operation of the device is not implied at conditions exceeding those given in the operational sections of the data sheet.

3.Exposure to absolute maximum ratings for extended periods can affect device reliability adversely

Handling Procedures

1. Suggested bonding condition

● Bonding temperature: 350℃

● Bonding force: 30 grams (not exceed 40 grams)

● Bonding force and temperature should be applied in a gradual fashion

● Bonding time: <= 10 seconds

2. Suggested burn-in conditions

Conditions 1：

● Chip heatsink temperature: 100℃

● Current: 100mA

● Time: 24 hours

● Pass Criteria: BI 0hrs LIV1；BI 24hrs LIV2 Compare LIV2 to LIV1

● Delta Ith (T=25℃) ≤1mA and Delta Pf(T=25℃) ≤10%

Conditions 2：

● Chip heatsink temperature: 100℃

● Current: 100mA

● Time: 24 hours+48hrs

● Pass Criteria: BI 24hrs LIV1；BI 24hrs+48hrs LIV2 Compare LIV2 to LIV1

● Delta Ith (T=25℃) ≤0.7mA and Delta Pf(T=25℃) ≤5%

Application

● Tunable diode laser absorption spectroscopy

● CH₄ Monitoring

Ordering Info

TDLAS-DFB Chips-☆-A8▽-W□□□□

☆ ：Output Power

A：5.5mW

B：20mW

▽：Wavelength Tolerance

1：±1nm

2：±2nm

□□□□：Wavelength

1625:1625nm

*****

1653.7：1653.7nm

TDLAS DFB Laser Chip

Product model

Parameter

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