Central wavelength 1648.2nm, Output power 5.5mW, SMSR 40dB
Part Number : TDLAS-DFBCHIPS-A-A81-W1648.2 |
Unit Price : USD [Please inquire] |
Lead time : in stock |
Inventory quantity : [Please inquire] |
Stock NO. : I80011020 |
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The laser is a semiconductor InGaAsP DFB laser working at the 1625nm, 1648.2nm, 1650.9nm or 1653.7 nm wavelength range. The device can be delivered in chip forms. This high performance, and high reliability laser is suitable for gas detection application.
Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)
Parameter | Symbol | Min | Typ | Max | Unit |
Centre Wavelength | λ | 1625 1648.2 1650.9 1653.7nm | |||
Side Mode Suppression Ratio | SMSR | 30 | 40 | dB | |
Threshold Current | Ith | 5 | 10 | mA | |
Operating Current | Iop | 80 | 120 | mA | |
Chip output Power | Pf | 5.5 | 10 | 30 | mW |
Quantum Efficiency | η | 0.08 | 0.12 | mW/mA | |
Current Tuning Coefficient | ∆λ/∆I | 0.015 | nm/mA | ||
Temperature Tuning Coefficient | ∆λ/∆T | 0.12 | nm/K | ||
Forward Voltage | Vf | 1.3 | 2 | V | |
Kink deviation | KINK | 30% | |||
Beam divergence angle (parallel) | ϑ// | 25 | Deg | ||
Beam Divergence angle (perpendicular) | ϑ⊥ | 35 | Deg | ||
Resistance | Rs | 8 | ohm | ||
20dB width | △λ | 1 | nm |