900-2600nm InGaAs biased photodetector

LD-PD PTE.LTD's InGaAs biased photodetector has a sensitivity range of 500nm~2600nm, extremely low noise, fast response, no gain, low cost, suitable for conventional photodetection applications, excellent performance, high cost performance, and provides omnidirectional technical support, which is often used in visible light and infrared light measurement.

Name	Model	Description	Parameter	Price
900-2600nm InGaAs biased photodetector [PDF] [RFQ]	PDJBC9O10 Stock NO.: A80153439	Spectral Response 900-2600nm; active area Φ1.0mm, rise time 25ns, bandwidth 14MHz	Response wavelength: 900-2600nm Active area: 1mm Bandwidth: 14MHz Lead Time: 3-4 weeks	[Please inquire] Call us
900-2600nm InGaAs biased photodetector [PDF] [RFQ]	PDJBC9O5 Stock NO.: A80153438	Spectral Response 900-2600nm; active area Φ0.5mm, rise time 17ns, bandwidth 20.6MHz	Response wavelength: 900-2600nm Active area: 0.5mm Bandwidth: 20.6MHz Lead Time: 3-4 weeks	[Please inquire] Call us
800-1700nm InGaAs biased photodetector [PDF] [RFQ]	PDJBC8J20 Stock NO.: A80153437	Spectral Response 800-1700nm; active area Φ2.0mm, rise time 30ns, bandwidth 11.7MHz	Response wavelength: 800-1700nm Active area: 2mm Bandwidth: 11.7MHz Lead Time: 3-4 weeks	[Please inquire] Call us
900-1700nm InGaAs biased photodetector [PDF] [RFQ]	PDJBC9N10 Stock NO.: A80153436	Spectral Response 900-1700nm; active area Φ1.0mm, rise time 10ns, bandwidth 35MHz	Response wavelength: 900-1700nm Active area: 1mm Bandwidth: 35MHz Lead Time: 3-4 weeks	[Please inquire] Call us
500-1700nm InGaAs biased photodetector [PDF] [RFQ]	PDJBC5I10 Stock NO.: A80153435	Spectral Response 500-1700nm; active area Φ1.0mm, rise time 5ns, bandwidth 70MHz	Response wavelength: 500-1700nm Active area: 1mm Bandwidth: 70MHz Lead Time: 3-4 weeks	[Please inquire] Call us

Parameter

Features

● The photosensitive range covers 500nm~2600nm, and is often used for visible light and infrared light measurement

● Biased detector, extremely low noise, fast response, no gain

● Low cost, suitable for conventional photoelectric detection applications

● Excellent performance, high cost performance, all-round technical support

Key Parameter

Parameters	Value
Wavelength range	500-1700nm	900-1700nm	800-1700nm	900-2600nm
Photosensitive size	Φ 1.0mm	Φ1.0mm	Φ2.0mm	Φ0.5mm	Φ1.0mm
Bandwidth range	70MHz	35MHz	11.7MHz	20.6MHz	14MHZ
Rise time (@50Q)	5ns	10ns	30ns	17ns	25ns
NEP	2.0x10^-14W/Hz^1/2	2.5x10^-14W/Hz^1/2	1.3x10^-13W/Hz^1/2	1.0x10^-12W/Hz^1/2	1.5x10^-12W/Hz^1/2
Dark current	1.5nA(Typ.)/10nA(Max)	1.0nA(Typ.)/25nA(Max)	1.0nA(Typ.)/25nA(Max)	2uA(Typ.)/20uA(Max)	5uA(Typ.)/40uA(Max)
Junction capacitance	50pF(TyP.)	80pF(TyP.)	80pF(TyP.)	140pF(TyP.)	500pF(TyP.)
Bias voltage	5V		1.8V
Output current	0~5mA
Output voltage	~9V(Hi-Z); ~170 mV(50Ω)
Photosensitive surface depth	0.09"(2.2 mm)
Operating temperature	10-50°C
Storage temperature	-20-70°C
Detector net weight	0.10kg
Undervoltage index	Vout ≤9V(Hi-Z) Vout ≤170mV(502)
Appearance size	2.79X1.96"X0.89"(70.9 mmX49.8 mm X 22.5 mm)
Power supply battery	Power switch	Signal interface	Battery monitoring	Strut interface	Optical interface
A23, 12VDC, 40mAh	Slide switch	BNC female socket	Momentary push button	M4X2	SM1 X1 SM0.5 x 1

Response Curve

Product Configuration

Optional configuration table

Silicon based biasing photodetector	Optional Configuration
Product Name	Material	Type	Feature	Wavelength range Active Area	Reserve Optional configuration
PD:" Photodetector"	J: InGaAs	B: Bias type	C: Conventional type	5110:500-1700nm, φ1.0mm
				9N10:900-1700nm, φ1.0mm
				8J20:800-1700nm, φ2.0mm
				905:900-2600nm, φ0.5mm
				9010:900-2600nm, φ1.0mm

Dimension

Application

● Visible and infrared light measurements

900-2600nm InGaAs biased photodetector

Product model

Parameter

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