Emission Wavelength

λ_R

1530-1570nm

Threshold current

I_TH

2

mA

Output Power

P_opt

0.3

mW

Threshold Voltage

U_TH

1.8

V

Driving Current

IOP

15

mA

Popt =   0.5mW

Laser voltage

UOP

3

V

Popt =   0.5 mW

Electro optic conversion rate

ηWP

12

%

Popt =   0.5 mW

Slope efficiency

ηS

0.3

W/A

Rise and Fall time

T_r /T_f

90/120

Psec

Differential series resistance

RS

100

200

Ω

Popt =   0.5 mW

3dB bandwidth

ν3dB

0.10

GHz

Popt =   0.5 mW

Due to   ESD protection diode

Relative intensity noise

RIN

-130

-120

dB/Hz

Popt =   0.3 mW @ 1 GHz

Wavelength tuning over current

0.6

nm/mA

Wavelength tuning over temperature

0.06

nm/K

Thermal resistance (VCSEL chip)

R_thermal

3

5

K/mW

Side mode supression

35

dB

I  =   2 mA

Beam divergence

θ

10

25

°

Popt =   0.5mW, full   width 1/e2

Spectral Width

100

MHz

Popt =   0.5 mW

Tec Current

mA

-150(Heating)

+300(Cooling)

Proper Heart Sink   Required

NTC Thermistor Resistance

KΩ

9.5

10.0

10.5

T=25℃@10 KΩ

NTC Thermistor Resistance

KΩ

10/exp{3892-(1/289K-I/T_OP)}

1

Thermoelectric Cooler (-)

5

Thermoelectric Cooler (+）

2

Thermistor

6

Thermistor

3

N/C

7

PD Monitor Cathode (+)

4

VCSEL Cathode (–)/PD Monitor Anode (-)

8

VCSEL Anode (+)

Store Temperature

  ℃

-40

25

125

Chip Temperature

℃

+10

25

40

Operating Current

mA

0

3.0

15.0

Forward Voltage

V

0.8

1.2

1.8

TEC Current

mA

-150

-

+300

Soldering Temperature*

℃

100

130

260

Electrical Power Dissipation

mw

-

-

5