parameter

symbol

units

conditions

min

typ

max

Reverse  breakdown voltage

BR

V

22℃±3℃ ，ID =10μA

60

80

90

Responsivity

Re

A/W

22℃±3℃，λ =1550nm ，M =1

0.8

0.85

Dark current

ID

nA

22℃±3℃，M =10

0.1

0.3

Capacitance

C

pF

22℃±3℃ ，M =10，f=1MHz

0.25

Temperature

η

V/K

-40℃ ~80℃，ID =10μA

0.15

PDE

%

-45℃, λ =1550nm, 0.1ph/pulse,poisson distribution single photon source

20

-

DCR

kHz

-45℃, 1ns gate width, 2MHz gated PRF, 1MHz optical PRF, PDE=20%

-

-

20*

APP

-45℃,1ns gate width, 2MHz gated PRF, 1MHz optical PRF, PDE=20%

-

-

1× 10^-3

Tj

ps

-45℃, 1ns gate width, 2MHz gated PRF, PDE=20%

-

-

100