InGaAs photodiodes offer superb response from 900nm to 1700nm, perfect for telecom and near IR detection. The 75 and 120 micron photodiodes are offered in isolated TO-46 packages with a lensed cap for single mode and multi-mode fiber coupling or Bare chips. These two sizes are also available with actively aligned FC receptacles. The 70 micron photodiode is perfect for high bandwidth applications while the 120 micron photodiode is perfect for active alignment applications. The 3mm photodiode is isolated in a TO-5 package with a broadband double sided AR-coated window. With the high shunt resistance, the 3mm photodiode is suitable for high sensitivity to weak signal applications.
Name | Model | Description | Parameter | Price |
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● Response Range From 1000nm to 1680nm
● High Responsivity, front side illuminated,double-side pads
● Φ=300μm, round optical window
The Opto-electronic Characteristics(@Tc=22±3℃)
Parameters | Sym. | Test conditions | Min | Typ | Max | Unit |
Response Spectrum | λ | - | 1000~1680 | nm | ||
Active Diameter | $ | - | 300 | μm | ||
Reponsivity | Re | λ=1.31μm, VR=5V, φe=100μW | 0.9 | - | - | A/W |
Forward Voltage | VF | IF=1mA | - | 0.6 | 0.7 | V |
Reverse Breakdown Voltage | VBR | ID=10μA, φe=0 | 35 | 40 | - | V |
Dark Current | ID | VR=5V, φe=0 | - | 0.2 | 0.8 | nA |
Capacitance | CPD | VR=5V, φe=0, f=1MHz | - | 5 | 8 | pF |
Rising Time/Falling Time | Tr/Tf | VR=5V, φe=1mW | - | 0.5 | 1 | ns |
DC Saturation Power | Sat | VR=0V | 1.0 | 2.5 | - | mW |
VR=5V | 6.0 | 14.0 | - |
Die Size | 500μm×500μm |
Die Thickess | 175±10μm |
Bond Pad Diameter | 75μm |
Photosensitive Diameter | 300μm |
Extend Electrode Length | 30μm |
P metal | Au |
N metal | Au |
Note: The structure of PIN PD is planar and front illuminated with P electrode on the top and N electrode on the bottom.
Absolute Maximum Rating
Parameter | Symbol | Rating | Unit |
Operating temperature | TC | -40~+85 | ℃ |
Storage temperature | TSTG | -50~+125 | ℃ |
Forward Current | IF | 10 | mA |
Reverse Current | IR | 10 | mA |
ESD susceptibility | ≥300 | V |
Matters needing attention:
a. Take appropriate ESD protections to avoid damage.
b. InP chips are fragile and easily damaged, so special caution should be used when handling.
c. Do not handle with tweezers. A vacuum tip with a flat surface is recommended. Bonding force and temperature should be applied in a gradual fashion.
● Fiber communication
● Fiber sensor