Φ1mm InGaAs APD Four-quadrant photodetector chip

InGaAs APD Four-quadrant photodetector chip is a high performance near infrared photodetector chip.The spectral response range is 0.9~1.7μm, which has high detection sensitivity, high spatial resolution and fast response speed. It is widely used in alignment detection, precision displacement measurement, vibration detection, Angle measurement, guidance and other applications.

Name	Model	Description	Parameter	Price
InGaAs APD Four-quadrant photodetector chip [PDF] [RFQ]	OVQT-QA1000 Stock NO.: I80030009	Response Spectrum 900~1700nm, Photosensitive surface diameter 4x1.5mm, Response Time 1.5ns	Response wavelength: 900-1700nm Material: InGaAs Active area: 4x1.5mm Package: Chip Lead Time: 2-3 weeks	[Please inquire] Call us

Name

Model

Description

Parameter

Price

InGaAs APD Four-quadrant photodetector chip [PDF] [RFQ]

OVQT-QA1000
Stock NO.: I80030009

Response Spectrum 900~1700nm, Photosensitive surface diameter 4x1.5mm, Response Time 1.5ns

Response wavelength: 900-1700nm

Material: InGaAs

Active area: 4x1.5mm

Package: Chip

Lead Time: 2-3 weeks

[Please inquire]

Call us

Parameter

Features

● Positive view of the planar structure

● The quadrant interval is small and the crosstalk is low

● Low dark current, high reliability

● Chip or TO package is provided

Specifications

Part Nnumber：OVQT-QA1000
Parameter	Symbol	Unit	Measurement conditions	Min	Typ	Max
Photosensitive surface diameter		μm	-	1000
Quadrant interval	d	μm	-	100
Reverse Breakdown Voltage	V_BR	Vm	R=100uA，No light	40	-	60
Responsivity	R_e	A/W	1550nm，1μW M=1	0.9	-	-
Response Time	t	ns	F=1MHz,RL=5Ω	-	1.5	3
Dark current	I_D	nA	M=10	-	25	100
Crosstalk	S_L		M=10	-	10%	-
Capacitance	C	pF	F=1MHz,M=10	-	12	15
Maximum available gain (MAG)	M	V	V_BR_1	20	-	-
Breakdown voltage temperature coefficient	n	V/℃	-40~+85℃	-	0.1	0.15

Reliability of quality: The product meets the Telcordia-GR-468-CORE requirements for product reliability.

Maximum absolute rating

Parameter	Symbol	Rating
Operating Temperature	TC	-50~+85℃
Reverse operating voltage	VR	0.99Vbr
Forward Current	IF	10mA
Reverse current	IR	2mA

Package Size

Unit: μm

Part Number	Chip size（±10μm）	Photosensitive surface size（±2μm）	Diameter of pad（±2μm）	Chip thickness（±5μm）
OVQT-QA1000	1250×1250	1000	80	150

Application

● Eye safety laser guidance, collimation, navigation, etc

● Free space optical communication

● Precision machining and other industrial control fields

Φ1mm InGaAs APD Four-quadrant photodetector chip

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Parameter

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