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    • InGaAs SPAD 3pin TO46 detector     


    High - temperature InGaAs/InP Geiger - mode avalanche photodiodes (GM - APD) are special devices for short - wave infrared single - photon detection and counting. This detector has been specially optimized for the single - photon detection performance in the temperature range of 0℃ and above. It can meet the technical requirements of high - efficiency and low - dark - count single - photon detection in fields such as quantum secure communication and weak light detection while significantly reducing the refrigeration requirements. It can realize the detection of single photons with wavelengths from 0.9 to 1.7μm, and meet the needs of equipment miniaturization and operation under different working conditions.



    Product model


    Name Model Price


    Parameter



    Features

    ● TO46 package with metal housing

    ● Suitable for high - speed gating mode (≥100MHz) and free - running mode applications

    ● High detection efficiency (>20% @ afterpulse probability below 2%)

    ● Low dark count rate at high temperature (optimal <2kHz @ 20% detection efficiency @ 0℃ @ 100MHz)

    E/O Characteristics

    Parameter/Symbol

    Test Condition

    Minimum

    Maximum

    Unit

    DC Characteristics

    Tc=23±2℃

    Breakdown Voltage，Vbr

    Id=10μA

    50

    80

    V

    Responsivity，Re

    λ=1.55μm,   Vr=Vbr－2V, Φe=1μW

    8


    A/W

    Dark Current，Id

    Vr=Vbr－2V, Φe=0μW


    1

    nA

    Capacitance，Ctot

    Vr=Vbr－2V, f=1MHz


    0.25

    pF

    Breakdown Voltage Temperature Coefficient，η

    Top   = ﹣40~﹢30℃,   I=10μA, Φe=0


    0.15

    V/℃

    Geiger Characteristics

    Top=0℃

    Photon Detection Efficiency，PDE

    0.1ph/pulse,   λ=1.55μm

    20


    %

    Normalized Dark Count Rate*，DCR

    fg=100MHz,   PDE=20%


    10

    kHz

    Afterpulse Probability，APP

    fg=100MHz,   PDE=20%


    2.5

    %


    Typical Curves：

    SPAD1.png

    Absolute Maximum Ratings：

    Items

    Parameter/Symbol

    Rating

    Absolute Maximum Ratings

    Storage Temperature，Tstg

    ﹣50℃~﹢85℃

    (Operating) Ambient Temperature，Tc

    ﹣50℃~﹢80℃

    Soldering Temperature，Tsld（time）

      260℃（10s）

    DC Reverse Bias Voltage，Vr

    Vbr

    Overbias Pulse Amplitude，Vg

    10V

    Input Optical Power，Φe（continuous）

    1mW

    Forward Current，If（continuous）

    1mA

    Electrostatic Discharge Susceptibility，ESD

    ≥300V









    Dimensions and Pin definitions

    Mechanical Dimension &Pin Layout：

    SPAD3.png

    Note：Spherical Lensφ 2mm， Refractive Indexnd=2.0，TransmittanceT≥98% @1260~1650nm.

    The product complies with the relevant requirements of GJB8119-2013 General Specification for Semiconductor Optoelectronic Devices

    Application

    ● Quantum secure communication

    ● Weak light detection

    ● Laser ranging

    ● Biomedical



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