Operation Wavelength

λ

900

1550

1620

nm

Detector responsivity

R

Vcc   =0 V; λ=1550 nm

0.8

A/W

Vcc   =0 V; λ=1310 nm

0.8

Detector dark current

Id

Vcc   =+3.3 V

50

nA

Transimpedance gain

ZT

6000

Ω

Conversion gain

Gain

3000

V/W

Output voltage swing1

Vpp

700

mV

Lower cutoff frequency

fcut-off

100

MHz

3 dB bandwidth

BW

Vcc   =+3.3V ; P _Optical=-3 dBm

20

GHz

Input saturation power

Psat

Vcc   =+3.3V

3

dBm

RF return loss

S22

Vcc=+3.3   V ; 3dB Within Bandwidth

-10

dB

Operating current

I

Vcc=+3.3   V

70

75

mA

Optical Power

Ps

-3

dBm

Chip Voltage

Vcc

+3-+3.5

V

AGC Mode Voltage

VAGC

+2.7-+3.3

V

Control Voltage

VM

0-+1

V

Optical Power

Ps

7

dBm

Chip voltage

Vcc

4

V

AGC mode voltage

VAGC

4

V

Control voltage

VM

1.2

V

Working temperature

Top

-40 ~ +70

℃

Storage temperature

Tstg

-40 ~ +85

℃

Welding temperature

Ts

260（10s）

℃

PIN1

NC

No internal pins

 Control PIN

PIN2

NC

No internal pins

PIN3

Vcc

Chip power supply

PIN4

NC

No internal pins

PIN5

NC

No internal pins

PIN6

NC

No internal pins

PIN7

GND

Casing ground

PIN8

NC

No internal pins

PIN9

VAGC

AGC mode enabled, set to +2.7-+3.3V

 PIN10

 VM

Output   swing adjustment, 0-+1V, maximum output swing at +1V

PIN11

RSSI

Detector   current monitoring, output value is 25% of detector photocurrent

PIN12

NC

No internal pins

PIN13

NC

No internal pins

PIN14

NC

No internal pins

OUTP

Output+

Differential positive output

RF output port

OUTN

Output-

Differential inverted output

Optin

Optical Input

9um-SMF ，APC/FC Interface

Optical input port