Φ10mm InGaAs Ultra Large Active Area PIN Detector

PL-1700-IG-AR10-TO20 InGaAS PIN Detector, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 10mm in diameter. Planar-passivated device structure.

Name	Model	Description	Parameter	Price
10mm InGaAs PIN Photodiode [PDF] [RFQ]	PL-1700-IG-AR10-TO20 Stock NO.: E80042060	Response Spectrum 800~1700nm; Active diameter 10mm; responsivity:0.85A/W@1.31µm or 0.95A/W@1.55µm ,Material InGaAs	Response wavelength: 800-1700nm Material: InGaAs Active area: 10mm Lead Time: 4-6 weeks	[Please inquire] Call us

Name

Model

Description

Parameter

Price

10mm InGaAs PIN Photodiode [PDF] [RFQ]

PL-1700-IG-AR10-TO20
Stock NO.: E80042060

Response Spectrum 800~1700nm; Active diameter 10mm; responsivity:0.85A/W@1.31µm or 0.95A/W@1.55µm ,Material InGaAs

Response wavelength: 800-1700nm

Material: InGaAs

Active area: 10mm

Lead Time: 4-6 weeks

[Please inquire]

Call us

Parameter

Features

● Top illumination planar PD

● Narrow Element gap,

● Low Crosstalk,High reliability

● Good Reponsivity homogeneity of each Quadrant

E/O Characteristics

Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)

Parameters	Sym.	Test conditions	Min	Typ	Max	Unit
Response Spectrum	λ	-	900~1700			nm
Active diameter	φ	-	10			mm
responsivity	Re	λ=1.31µm,VR=5V,φe =10µw	0.85			A/W
responsivity	Re	λ=1.55µm,VR=5V,φe =10µw	0.95			A/W
Reverse breakdown voltage	VBR	I R =10µA	25			V
Dark current	ID	V R =5V			100	nA
Total capacitance	C	V R =5V			10	nF
Shunt impedance	RSh	V R =10mV	10			MΩ
Response time	tS	VR=5V,RL=50Ω,f=2KHz	—	8	20	μs
Reponsivity Nouniformity	PRNU	VR=5V,λ=1.55μm,φe=100μw			±2	%

Typical characteristical curve

Responsivity, R (A/W)

Wavelength, λ (nm)

P-I Curve

Application electric circuit

Dimensions and Pin definitions

Absolute maximum ratings

Item	Symbol	Unit	Min	Typ	Max	Testing Condition
PD Forward Current	I_F	mA		-	10
PD Reverse current	I_R	mA		-	5
Lead Soldering time		S		-	10s	260℃
Store Temperature	T_STG	℃	-40	-	+85	2000hr
Operating Temperature	T_OP	℃	-55	-	+125
Relative Humidity	RH		5%	-	95%	Noncondensing

Application

● Laser guidance

● Laser positioning

● Laser navigation

● Laser range finder

Ordering Info

PL-□□□□-☆-AR▽-XX

□□□□: Cut off Wavelength

400: 400nm

900: 900nm

1700: 1700nm

2100: 2100nm

2400: 2400nm

2700: 2700nm

☆: Material

IG: InGaAs

Si: Si

▽: Active Area

1: 1mm

2: 2mm

….

5: 5mm

10: 10mm

XX: Package/Fiber and Connector Type

FSA=SMF-28E Fiber coupled+ FC/APC

FSP=SMF-28E Fiber coupled + FC/PC

FPP=PM Fiber Fiber coupled + FC/PC

FPA=PM Fiber Fiber coupled + FC/APC

TO: TO46 Package

User Safety

Safety and Operating Considerations

This device operates under reverse bias voltage, and the polarity of the device can’t be reversed.

Operating the Photodiode outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used with this component cannot exceed maximum peak optical power.

ESD PROTECTION—Electrostatic discharge (ESD) is the primary cause of unexpected laser diode failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces, and rigorous antistatic techniques when handling Photodiodes.

Φ10mm InGaAs Ultra Large Active Area PIN Detector

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