PHOTODETECTOR: 800~2600nm, InGaAs, Amplified ,Adjustable GAIN，Infrared extension

Our InGaAs detectors feature a spectral response range of 800–2600 nm, commonly used for near- to mid-infrared measurements.The amplified detector offers 8-stage adjustable gain for precise photoelectric conversion.With a wide dynamic range, it is suitable for various infrared optoelectronic development scenarios and enjoys broad applicability.It delivers outstanding performance, excellent cost-effectiveness, and comprehensive technical support.Custom non-standard solutions are also available upon request.

Name	Model	Description	Price

Parameter

Features

● InGaAs detector with a spectral response range of 800–2600 nm, ideal for near- to mid-infrared measurements;

● Amplified detector, 8-level adjustable gain, quantitative photoelectric conversion;

● Wide dynamic range, suitable for various infrared optoelectronic development applications;

● Exceptional performance, high cost-effectiveness, and comprehensive technical support;

● Custom non-standard solutions available on request

Specifications

Common parameters

Part Number	InGaAs-0.8/2.2um-1x1mm-AG8		InGaAs-0.8/2.2um-2x2mm-AG8		InGaAs-0.8/2.6um-1x1mm-AG8		InGaAs-0.8/2.6um-2x2mm-AG8
Spectral Response Range	800~2200nm				800~2600nm
Response time constant	35ns		200ns		25ns		233ns
Gain	Hi-Z load: 1.51kV/A~4.75 MV/A; 50Ω load: 0.75kV/A~2.38 MV/A
Signal amplitude	Hi-Z load: 0~10V; 50Ω load: 0~5V
Gain adjustment method	Rotary gear adjustment, 0~70dB, 10dB per gear, 8 gears in total. Bandwidth is inversely proportional to gain.
NEP	1.0X10^-1(W/Hz^1/2)		2.5X10^-14(W/Hz^1/2)		1.0X10^-12(W/Hz^1/2)		2.0X10^-12(W/Hz^1/2)
Active Area	1mm x 1mm		2mm x 2mm		1mm x 1mm		2mm x 2mm
Active Area depth	0.13" (3.3 mm)
Detector net weight	0.10kg
Operating temperature	10～40℃
Storage temperature	-20～70℃
Dimensions	2.79" X 2.07" X 0.89" (70.9 mm X 52.5 mm X 22.5 mm)
Power supply interface	Power switch	Signal interface		Gain adjustment		Rod interface		Optical interface
LUMBERG RSMV3 FEMALE	Slide switch with LED lights	BNC female connector		8-position knob		M4 x 2		SM1 x 1 SM0.5 x 1

Eight-level quantitatively adjustable gain parameters

0dB		10dB		20dB		30dB
Gain (Hi-Z)	1.51X10³V/A	Gain (Hi-Z)	4.75X10³V/A	Gain (Hi-Z)	1.5X10⁴V/A	Gain (Hi-Z)	4.75X10⁴V/A
Gain (50Ω)	0.75X10³V/A	Gain (50Ω)	2.38X10³V/A	Gain (50Ω)	0.75X10⁴V/A	Gain (50Ω)	2.38X10⁴V/A
Bandwidth (BW)	13MHz	Bandwidth (BW)	1.7MHz	Bandwidth (BW)	1.1MHz	Bandwidth (BW)	300kHz
Noise (RMS)	≤250μV	Noise (RMS)	≤250μV	Noise (RMS)	≤250μV	Noise (RMS)	≤250μV
40dB		50dB		60dB		70dB
Gain (Hi-Z)	1.51X10⁵V/A	Gain (Hi-Z)	4.75X10⁵V/A	Gain (Hi-Z)	1.5X10⁶V/A	Gain (Hi-Z)	4.75X10⁶V/A
Gain (50Ω)	0.75X10⁵V/A	Gain (50Ω)	2.38X10⁵V/A	Gain (50Ω)	0.75X10⁶V/A	Gain (50Ω)	2.38X10⁶V/A
Bandwidth (BW)	90kHz	Bandwidth (BW)	28kHz	Bandwidth (BW)	9kHz	Bandwidth (BW)	3kHz
Noise (RMS)	≤250μV	Noise (RMS)	≤250μV	Noise (RMS)	≤300μV	Noise (RMS)	≤400μV
Signal bias	±8mV(Typ.) ，±12mV(Max)

Response curve

Dimension

Product Configuration

Application

● Monitor the output of Q-switched lasers

● Monitor the output of mode-locked lasers

Ordering Info

PN#	Spectral response range	Active area	Gain range	Features
InGaAs-0.8/2.2um-1x1mm-AG8	800~2200nm	1mm x 1mm	0~70dB eight-level quantitative adjustable gain	Standard model
InGaAs-0.8/2.2um-2x2mm-AG8				Large active area
InGaAs-0.8/2.6um-1x1mm-AG8	800~2600nm	2mm x 2mm		Extended coverage up to 2.6 μm
InGaAs-0.8/2.6um-2x2mm-AG8

PHOTODETECTOR: 800~2600nm, InGaAs, Amplified ,Adjustable GAIN，Infrared extension

Product model

Parameter

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