Φ1.5mm InGaAs Quadrant PIN Detector

PL-IG-1700-QD1.5-TO InGaAs Quadrant PIN Detector, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 4x1.5mm in diameter. Planar-passivated device structure.

Name	Model	Description	Parameter	Price
1.5mm InGaAs Quadrant PIN Detector [PDF] [RFQ]	PL-1700-IG-QD1.5-TO Stock NO.: E80042063	Response Spectrum 850~1700nm, Active diameter 4x1.5mm, Response Time 0.5ns, Package TO46	Response wavelength: 850-1700nm Material: InGaAs Active area: 4x1.5mm Package: TO-46 Lead Time: in stock	[Please inquire] Call us

Name

Model

Description

Parameter

Price

1.5mm InGaAs Quadrant PIN Detector [PDF] [RFQ]

PL-1700-IG-QD1.5-TO
Stock NO.: E80042063

Response Spectrum 850~1700nm, Active diameter 4x1.5mm, Response Time 0.5ns, Package TO46

Response wavelength: 850-1700nm

Material: InGaAs

Active area: 4x1.5mm

Package: TO-46

Lead Time: in stock

[Please inquire]

Call us

Parameter

Features

● Top illumination planar PD

● Narrow Element gap,

● Low Crosstalk,High reliability

● Good Reponsivity homogeneity of each Quadrant

E/O Characteristics

Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)

Parameters	Sym.	Test conditions	Min	Typ	Max	Unit
Response Spectrum	λ	VR=5V	850~1700			nm
Active diameter	φ	-	4x1.5			mm
Element gap	d		30			um
Reponsivity	Re	λ=0.9µm,VR=5V,φe =1µw	0.30			A/W
Reponsivity	Re	λ=1.55µm,VR=5V,φe =10µw	0.9			A/W
Reverse breakdown voltage	VBR	I R =10µA	30			V
Dark current	ID	V R =5V			0.5	nA
Total capacitance	C	V R =5V			1.5	nF
Crosstalk	SL	V R =5V			2	%
Max linear power	Φs	VR =5V, λ=1.55μm	10	-	-	mW
-3dB bandwidth	BW	VR=5V,λ=1.55μm，RL=50Ω	100	-	-	MHZ

Typical characteristical curve

2345截图20190524203623_副本.png

P-I Curve

xg_副本_副本.png

Application electric circuit

Dimensions and Pin definitions

1	2nd Quadrant P +	4	4th Quadrant P +
2	1st Quadrant P +	5	3rd Quadrant P +
3	GND	6	Common N- Pole

Absolute maximum ratings

Item	Symbol	Unit	Min	Typ	Max	Testing Condition
Case Temperature	T_OP	℃	-5	25	70
Forward Voltage	V_R	V	2	4	5
Axial Pull Force		N	-	-	5N	3x10s
Side Pull Force		N	-	-	2.5N	3x10s
Fiber Bend Radius			16mm			-
Reverse Voltage(PD)	V_PD	V	-	-	10	C=100pF,R=1.5KΩ，HBM
PD electrostatic Discharge	V_ESD-PD	V		-	500
PD Forward Current	I_PF	mA		-	10
Lead Soldering time		S		-	10s	260℃
Store Temperature	T_STG	℃	-40	-	+85	2000hr
Operating Temperature	T_OP	℃	-55	-	+125
Relative Humidity	RH		5%	-	95%	Noncondensing

Application

● Laser guidance

● Laser positioning

● Laser navigation

● Laser range finder

Ordering Info

PL-□□□□-☆-QD▽-XX

□□□□: Cut off Wavelength

400: 400nm

900: 900nm

1700: 1700nm

2100: 2100nm

2400: 2400nm

2700: 2700nm

☆: Material

IG: InGaAs

Si: Si

▽: Active Area(Single element)

1: 1mm

2: 2mm

…

3: 3mm

XXX: Package/Fiber and Connector Type

FSA=SMF-28E Fiber coupled+ FC/APC

FSP=SMF-28E Fiber coupled + FC/PC

FPP=PM Fiber Fiber coupled + FC/PC

FPA=PM Fiber Fiber coupled + FC/APC

TO: TO46 Package

User Safety

Safety and Operating Considerations

This device operates under reverse bias voltage, and the polarity of the device can’t be reversed.

Operating the Photodiode outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used with this component cannot exceed maximum peak optical power.

ESD PROTECTION—Electrostatic discharge (ESD) is the primary cause of unexpected laser diode failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces, and rigorous antistatic techniques when handling Photodiodes.

Φ1.5mm InGaAs Quadrant PIN Detector

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