O-band Semiconductor Optical Amplifier     


O band SOA chip, 1500um, ridge waveguide



Product model


Name Model Price

Parameter


Features

● Bare die or Chip on carrier 

● High Gain and high Saturated Power  

● High Pulse Modulation Speed

E/O Characteristics

Electrical/Optical Characteristics(T=25℃,unless noted otherwise)

Parameters

Condition

Min

Typ

Max

Unit

Center Wavelength

If=Iop

1275


1325

nm

Operating Current

Iop



900

mA

Output Power

Pin=7dBm ASE, If=900mA



21

dBm

Forward Voltage

If=Iop


1.5


V

Small Signal Gain

IF=300mA

25



dB

Gain Ripple

COC, If=300mA


1

2

dB

3dB Bandwidth

COC, If=300mA


45


nm

Series Resistance

Slope 50mA and 100mA


5


ohm

Polarization Dependence Gain1

COC, If=300mA


1.5


dB

Noise Fugure

COC, If=300mA


7


dB

Exit Angle

End facet from the optical   axis,If=Iop


23


Deg.

Far field angle-lateral

FWHM,If=Iop


7

30

Deg.

Far field angle-vertical

FWHM,If=Iop


14

32

Deg.

1For polarization dependent.


Absolute Maximum Rating(T=35℃,unless noted otherwise)

Parameters

Symbol

Min

Typ

Max

Unit

Forward Current(LD)

If



900

mA

Reverse Voltage(LD)

Iop



2

V

Operating Temperature

Top

-10


65

℃

Storage Temperature

Tstg

-20


85

℃

Storage Relative Humidity

RH



85

%

ESD-HBM

ESD

500



V

Input Optical Power

Pin



15

dBm


Dimension

O-band Semiconductor Optical Amplifier.png

Bar die Configuration

(1) Electrode:Top contact: anode, Bottom contact: Cathode

(2) Dimension:Chip size: 600μm (width) * 1500μm (cavity length) * 110μm (thickness)

(3) Tolerance: +/-20μm-width, +/-30μm-cavity length, +/-15μm- thickness

 

Matters needing attention

1. The LD chip is sensitive to avoid the contact between the cavity surface and the ridge waveguide.

2. Anti static protective layer can be used for packaging materials, but degradable materials can not be used, meeting ROHS and REACH environmental requirements. Materials that release chemicals during degradation and cause chip contamination shall not be used.

3. The chip storage box and carrier tooling shall be cleaned regularly. The chip shall be stored in the

sealed bag and container for a long time transportation, and the chip must always be placed in the

container and taken out when necessary.

4. The conditions for using the chip storage device cabinet are as follows:

(1) Relative humidity in cabinet: 7%~30%;

(2) Number of suspended particles: in accordance with GB/T 25915.1-2010;

(3) Purified gas: 99% nitrogen or dry air;

(4) Temperature: 17 ℃~28 ℃.

5. Environmental requirements: long-term storage chip cabinet or container service conditions:

(1) Purified gas: 99% nitrogen or inert gas (purity greater than 99.5%);

(2) Temperature: 17 ℃~25 ℃;

(3) Relative humidity: 7%~25% (anti static accumulation/anti condensation and moisture ingress);

(4) ESD level: ≥ 150V;

(5) Gas pressure: slightly higher than ambient atmospheric pressure.

6. The chip is attached to the blue film, and the adhesion between the chip and the blue film is moderate to ensure that the chip does not fall off, and the chip does not adhere too tightly to be removed and damaged.

7. During transportation, add moisture-proof packaging outside the standard anti-static packaging. The chip is sealed in an anti-static vacuum bag, the vacuum bag and anti-static shock absorption materials are put together in the internal packaging box, and the product certification mark is placed on the packaging box; Put the inner packaging box and damping materials into the outer transport packaging box, and then place the final identification of the product certificate on the packaging box; The cartons are made of insulating mate


Application

● Optical shutter 

● Broadband optical source 

● Optical transceiver 

● Pre-amplifier 

● 100G BASE-ER4/ZR4

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