O band SOA chip, 1500um, ridge waveguide
| Name | Model | Description | Price |
|---|
● Bare die or Chip on carrier
● High Gain and high Saturated Power
● High Pulse Modulation Speed
Electrical/Optical Characteristics(T=25℃,unless noted otherwise)
Parameters | Condition | Min | Typ | Max | Unit |
Center Wavelength | If=Iop | 1275 | 1325 | nm | |
Operating Current | Iop | 900 | mA | ||
Output Power | Pin=7dBm ASE, If=900mA | 21 | dBm | ||
Forward Voltage | If=Iop | 1.5 | V | ||
Small Signal Gain | IF=300mA | 25 | dB | ||
Gain Ripple | COC, If=300mA | 1 | 2 | dB | |
3dB Bandwidth | COC, If=300mA | 45 | nm | ||
Series Resistance | Slope 50mA and 100mA | 5 | ohm | ||
Polarization Dependence Gain1 | COC, If=300mA | 1.5 | dB | ||
Noise Fugure | COC, If=300mA | 7 | dB | ||
Exit Angle | End facet from the optical axis,If=Iop | 23 | Deg. | ||
Far field angle-lateral | FWHM,If=Iop | 7 | 30 | Deg. | |
Far field angle-vertical | FWHM,If=Iop | 14 | 32 | Deg. |
1For polarization dependent.
Absolute Maximum Rating(T=35℃,unless noted otherwise)
Parameters | Symbol | Min | Typ | Max | Unit |
Forward Current(LD) | If | 900 | mA | ||
Reverse Voltage(LD) | Iop | 2 | V | ||
Operating Temperature | Top | -10 | 65 | ℃ | |
Storage Temperature | Tstg | -20 | 85 | ℃ | |
Storage Relative Humidity | RH | 85 | % | ||
ESD-HBM | ESD | 500 | V | ||
Input Optical Power | Pin | 15 | dBm |

Bar die Configuration
(1) Electrode:Top contact: anode, Bottom contact: Cathode
(2) Dimension:Chip size: 600μm (width) * 1500μm (cavity length) * 110μm (thickness)
(3) Tolerance: +/-20μm-width, +/-30μm-cavity length, +/-15μm- thickness
Matters needing attention
1. The LD chip is sensitive to avoid the contact between the cavity surface and the ridge waveguide.
2. Anti static protective layer can be used for packaging materials, but degradable materials can not be used, meeting ROHS and REACH environmental requirements. Materials that release chemicals during degradation and cause chip contamination shall not be used.
3. The chip storage box and carrier tooling shall be cleaned regularly. The chip shall be stored in the
sealed bag and container for a long time transportation, and the chip must always be placed in the
container and taken out when necessary.
4. The conditions for using the chip storage device cabinet are as follows:
(1) Relative humidity in cabinet: 7%~30%;
(2) Number of suspended particles: in accordance with GB/T 25915.1-2010;
(3) Purified gas: 99% nitrogen or dry air;
(4) Temperature: 17 ℃~28 ℃.
5. Environmental requirements: long-term storage chip cabinet or container service conditions:
(1) Purified gas: 99% nitrogen or inert gas (purity greater than 99.5%);
(2) Temperature: 17 ℃~25 ℃;
(3) Relative humidity: 7%~25% (anti static accumulation/anti condensation and moisture ingress);
(4) ESD level: ≥ 150V;
(5) Gas pressure: slightly higher than ambient atmospheric pressure.
6. The chip is attached to the blue film, and the adhesion between the chip and the blue film is moderate to ensure that the chip does not fall off, and the chip does not adhere too tightly to be removed and damaged.
7. During transportation, add moisture-proof packaging outside the standard anti-static packaging. The chip is sealed in an anti-static vacuum bag, the vacuum bag and anti-static shock absorption materials are put together in the internal packaging box, and the product certification mark is placed on the packaging box; Put the inner packaging box and damping materials into the outer transport packaging box, and then place the final identification of the product certificate on the packaging box; The cartons are made of insulating mate
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