Φ1mm 800nm~3600nm Low noise, high reliability infrared detectors

InAs photovoltaic detectors have high sensitivity in the infrared region around 3 um as with PbS photoconductive detectors, and also feature low noise, high speed and high reliability. Various types are available, It can work in non-cooled condition that delivers high performance.

Name	Model	Description	Parameter	Price
1mm InGaAs PIN Photodiode TO5 [PDF] [RFQ]	PL-IG-AR1-W3600-TO Stock NO.: E80043068	Response wavelength 800~3600nm, Material InAs, Active area 1mm, TO5 Package	Response wavelength: 800-3600nm Material: InAs Active area: 1mm Package: TO-5 Lead Time: 3-4 weeks	[Please inquire] Call us

Name

Model

Description

Parameter

Price

1mm InGaAs PIN Photodiode TO5 [PDF] [RFQ]

PL-IG-AR1-W3600-TO
Stock NO.: E80043068

Response wavelength 800~3600nm, Material InAs, Active area 1mm, TO5 Package

Response wavelength: 800-3600nm

Material: InAs

Active area: 1mm

Package: TO-5

Lead Time: 3-4 weeks

[Please inquire]

Call us

Parameter

Features

● Low noise

● High detectivity (D*)

● High reliability

● Available in multi-element arrays (custom product)

E/O Characteristics

Electrical/Optical Characteristics(Tsub=25°C, CW bias unless stated otherwise)

Parameter	Symbol	Unit	Typical Value
Active diameter	Φ	mm	1.0
Spectral range	λ	nm	800-3600
Responsivity	Re (VR=-0.2V, λ=800nm)	mA/mW	0.08
	Re (VR=-0.2V, λ=3000nm)	mA/mW	1.0
	Re (VR=-0.2V, λ=3600nm)	mA/mW	0.2
Response time	Tr (RL=50Ω,VR=-0.2V)	ns	700
Shunt resistance	RSH	ohm	70
Dark current	Id (VR=-0.2V)	uA	250
Reverse Breakdown voltage	VBR (IR=10μA)	V	1
Junction capacitance	Cj (f=1MHz, VR=-0.2V)	pF	20
Saturated Optical Power	Ps(VR=-0.2V)	mW	2
NEP（λ=λp）		W/HZ^1/2	1.5X10^-11
Operating voltage	VR	V	0-0.2
Package	Hermetic package TO5

Typical characteristical curve

Responsivity, R (A/W)

Dark Current VS Reserve Voltage

Shunt resistance vs. element temperature

Linear

Sensitivity uniformity

Application electric circuit

Dimensions and Pin definitions

Absolute Maximem Ratings

Parameter	Symbol	Value	Unit
Operating temperature	Top	-20～+50	℃
Storage temperature	Tstg	-55～+70	℃
Forward current	If	10	mA
Reverse Voltage	Vr	1	V
Reverse current	Ir	1	mA
Soldering temperature(time)	Ts（10s）	260	℃

Application

● Gas analysis

● Laser detection

● Infrared spectrophotometry

● Radiation thermometer

Ordering Info

PL-☆-AR▽-W□□□□-XX

☆ ：Material

IG：InGaAs

Si：Si

▽：Active Area

0080:80um

1：1mm

□□□□：Cut off Wavelength

400: 400nm

900: 900nm

1700: 1700nm

2100: 2100nm

2400: 2400nm

2700: 2700nm

3600: 3600nm

XX: Package/Fiber and Connector Type

TO:TO5Package

FPG:FC/PC Plugged

User Safety

Safety and Operating Considerations

This device operates under reverse bias voltage, and the polarity of the device can’t be reversed.

Operating the Photodiode outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used with this component cannot exceed maximum peak optical power.

ESD PROTECTION—Electrostatic discharge (ESD) is the primary cause of unexpected laser diode failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces, and rigorous antistatic techniques when handling Photodiodes.

Φ1mm 800nm~3600nm Low noise, high reliability infrared detectors

Product model

Parameter

Related