Emission Wavelength

λ_R

Detail precision   Wavelength Choose   From Below Absorption Line

Threshold current

I_TH

0.5

mA

Output Power

P_opt

0.25

mW

Threshold Voltage

U_TH

1.8

V

Driving Current

IOP

2

mA

Popt = 0.3 mW

Laser voltage

UOP

2

V

Popt = 0.3 mW

Electro optic conversion rate

ηWP

12

%

Popt = 0.3 mW

Slope efficiency

ηS

0.3

W/A

Differential series resistance

RS

250

Ω

Popt = 0.3 mW

3dB bandwidth

ν3dB

0.10

GHz

Popt = 0.3 mW

Due to ESD   protection diode

Relative intensity noise

RIN

-130

-120

dB/Hz

Popt = 0.3 mW @ 1   GHz

Wavelength tuning over current

0.6

nm/mA

Wavelength tuning over   temperature

0.06

nm/K

Thermal resistance (VCSEL chip)

R_thermal

3

5

K/mW

Side mode supression

25

dB

I  = 2 mA

Beam divergence

θ

10

25

°

Popt = 0.3 mW, full     width 1/e2

Spectral Width

100

MHz

Popt = 0.3 mW

Tec Current

mA

-150(Heating)

+300(Cooling)

Proper   Heart Sink Required

NTC Thermistor Resistance

KΩ

9.5

10.0

10.5

T=25℃@10 KΩ

NTC Thermistor Resistance

KΩ

10/exp{3892-(1/289K-I/T_OP)}

Typ Emission Wavelength@Top=20 Iop=2mA

Final   wavelength Tuned by TEC and Current

760nm Absorption   Line

min

max

A   Grade

759.8

760.8

760.3

761.3

C   Grade

759.0

760.1

760.1

761.3

763nm   Absorption Line

A   Grade

762.5

763.5

763.0

764.0

C   Grade

761.9

764.9

763.0

764.8

Store Temperature

  ℃

-40

25

125

Chip Temperature

℃

+10

25

40

Operating Current

mA

0

2

3

Forward Voltage

V

0.8

1.2

1.8

TEC Current

mA

-150

-

+300

Soldering Temperature*

℃

100

130

270

Electrical Power   Dissipation

mw

-

-

5