850-910nm 56G baud PIN PD Chip     


LP-PD5032 56Gbaud High-Speed PIN Photodiode ChipThe LP-PD5032 is a high-performance 850-910nm PIN photodiode chip designed to meet the rigorous demands of next-generation optical communications. Featuring a specialized GSG (Ground-Signal-Ground) electrode structure and a 32um active area, this chip is optimized for high-speed data transmission with minimal signal interference.



Product model


Name Model Price
850-910nm 56G baud PIN PD Chip   [PDF]  [RFQ]

LP-PD5032
[Please inquire]

Parameter


Features

● Bandwidth up to 34GHz/channel

● Anti-reflective for 850-910nm 

● Φ32um active area

● Low capacitance

● GSG Electrode Structure

Specifications


Parameter

Symbol

Min

Typ

Max

Unit

Test CondDitions

Response range

λ

840

850

910

nm


Responsivity

R


0.55


A/W

λ=850nm


0.65


A/W

λ=910nm

Dark current

ID


0.3

1.0

nA

Vr=-5V

Capacitance

C


0.12

0.15

pF

VR=-2V, f=1MHz

Bandwidth

Bw


34.0


GHz

VR=-2V 3dB down, RL=50Ω

Note: (Tc=25℃, Single Die)


Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Reverse voltage

VRmax

20

V

Operating temperature

Topr

-40 to +85

Storage temperature

Tstg

-55 to +125

Dimension

Dimensions Diagram (μm)

20260408-193421.jpg


Dimension Parameter

Parameter

Symbol

Value

Unit

Active area diameter

D

32

μm

Bond pad size

-

60x70

μm

Die size

-

250x250

μm

Die thickness

t

150±10%

μm


Precautions for use

This chip is susceptible to damage as a result of ESD. Use of ground straps, antistatic mats, and other standard ESD protective equipment is requisite when handling ortesting an InGaAs or GaAs PIN/APD chip.


Application

● 100Gbps PAM4

● 50Gbps SFP+

● 4x100Gbps QSFP

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