C band SOA chip, 2500um, ridge waveguide
Name | Model | Description | Parameter | Price |
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● Chip on carrier
● High Gain and high Saturated Power
● High Pulse Modulation Speed
● Polarization Dependent
Parameters | Condition | Min | Typ | Max | Unit |
Operation Wavelength | C band | 1525 | 1572 | nm | |
L band | 1572 | 1622 | nm | ||
U band | 1622 | 1672 | nm | ||
Small Signal Gain | If=500mA, Pin=-15dBm Top=30 oC, | 30 | dB | ||
Wavelength-Dependent Gain | If=500mA, Pin=0dBm, Top=30 oC | 1 | dB | ||
Maximum Output Optical Power | Pin=0dBm, If=500mA, Top=30oC,Integrated power | 19 | dBm | ||
Saturated Output Power | 3dB down, If=800mA | 16 | dBm | ||
Noise Figure | If=300mA, Pin=-10dBm Top=30 oC, TE | 4.5 | 6 | dB | |
Fail/Rise time | 10%~90% | 1 | ns | ||
Forward Voltage | If=IOP | 1.5 | 1.8 | V | |
Series Resistance | Bar, slope 50mA 100mA | 9 | Ohms | ||
Light Input NA | 23 | Deg. | |||
Chip Beam Diameter | 4.5 | 5 | um | ||
X direction Light divergence angle | FWHM, If=IOP | 23 | 30 | Deg. | |
Y direction Light divergence angle | FWHM, If=IOP | 23 | 30 | Deg. |
Parameter | Symbol | Min | Typ | Max | Unit |
Forward Current (LD) | If | - | - | 1000 | mA |
Reverse Voltage (LD) | Vr | - | - | 2 | V |
Operating Temperature | Top | -10 | - | 80 | ℃ |
Storage Temperature | Tstg | -40 | - | 85 | ℃ |
Storage Relative Humidity | RH | - | 85 | % | |
ESD-HBM | - | 500 | - | - | V |
Environment
Parameters | Condition | Min | Typ | Max | |
Operation temperature | Top | 10 | 30 | 40 | °C |
Package | Sealed with nitrogen | ||||
Storage temperature | -40 | 85 | °C | ||
Short-term storage humidity | 50 | % | |||
Long term storage | Recommended to fill with nitrogen or store in vacuum |
● Aerospace equipment
● Configurable Add/Drop
● System monitoring
● Sensing system