• Home
  • Photodiode
  • Photodetector Chip
  • 2600nm Extended InGaAs/InP PIN PD Chip

    • 2600nm Extended InGaAs/InP PIN PD Chip     


    Extended InGaAs Photodiodes Chips, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 900 nm to 2600 nm. 



    Product model


    Name Model Price
    1000um Extended InGaAs/InP PIN PD Chip   [PDF]  [RFQ]

    LD-PD1000L-2600     		[Please inquire]
     Call us 
    500um Extended InGaAs/InP PIN PD Chip   [PDF]  [RFQ]

    LD-PD500L-2600     		[Please inquire]
     Call us 
    300um Extended InGaAs/InP PIN PD Chip   [PDF]  [RFQ]

    LD-PD300L-2600     		[Please inquire]
     Call us 

    Parameter


    Features

    ● High responsivity

    ● Cutoff wavelength: 2.5-2.6um

    ● Low dark current

    ● Top illuminated planar structure

    Specifications

    PARAMETER

    SYMBOL

    ACTIVE AREA (um)

    MIN

    TYP

    MAX

    UNIT

    TEST CONDITIONS

    Response   range

    λ

    All

    1000


    2600

    nm


    Responsivity

    R

    All


    1.0


    A/W

    λ=2300nm

    Capacitance

    C

    Φ300


    120


    pF

    VR=-1V,   f= 1MHz

    Φ500


    160


    Φ1000


    300


    Dark current

    ID

    Φ300


    1.0

    2.0

    uA

    VR=-0.5V

    Φ500


    3.0

    6.0

    Φ1000


    5.0

    10.0

    Breakdown

    Vbr

    All

    2




    I= 10uA


    Spectral Response

    8b1d5991.png


    Absolute Maximum Ratings

    PARAMETER

    SYMBOL

    VALUE

    UNIT

    Reverse voltage

    VRmax

    1

    V

    Forward Current


    10

    mA

    Operating temperature

    Topr

    -40 to +85

    ℃

    Storage temperature

    Tstg

    -40 to +100

    ℃


    Dimension Parameter

    PARAMETER

    SYMBOL

    Φ300

    Φ500

    Φ1000

    UNIT

    Active area diameter

    -

    300

    500

    1000

    µm

    Bond pad diameter

    -

    80

    80

    120

    µm

    Die size

    -

    420x420

    600x600

    1250x1250

    µm

    Die thickness

    t

    180±20

    180±20

    180±20

    µm


    Precautions for use

    This chip is susceptible to damage as a result of ESD. Use of ground straps, antistatic mats, and other standard ESD protective equipment is requisite when handling or testing an InGaAs or GaAs PIN/APD chip.

    Application

    ● Gas analyzers

    ● Moisture meters

    ● Near-infrared sensing

    ● Optical power meters

    Ordering Info

    PN#LD-PD300L-2600

    Response Range: 900-2600nm, Active area diameter:300um, Bare Chip

    PN#LD-PD500L-2600

    Response Range: 900-2600nm, Active area diameter:500um, Bare Chip

    PN#LD-PD1000L-2600

    Response Range: 900-2600nm, Active area diameter:1000um, Bare Chip



    By using this website and services, you agree to our use of cookies. Cookies enable us to better provide member services and record your browsing records in a short time. OK Learn more
    10+
    10 Years of Experience
    50+
    50 + Countries Bussiness
    10000+
    10k + Diodes sold worldwide
    30+
    30+ Invention patent
    1
    1 Semiconductor Lab
    10
    10+ Advanced Optical Solutions
    Add : 288 Woodlands Loop #04-00, Singapore 738100 Email : info@ld-pd.com Tel : （+65)31638599 Fax : (+65)31588700 Copyright © 2012-2025 LD-PD PTE. LTD. All Rights Reverved  LD-PD PTE. LTD. is proud to be RoHS certified through SGS and ISO9001 certified through GIC.
    close[X]
    Your shopping cart
    Model Quantity Price Subtotal
    Total price：USD:
    View shopping cart Settlement
    ︿ TOP
    提示