LD-PD PTE.LTD's InAsSb amplified photodetector has a photosensitivity range of 2-11um, 8 levels of adjustable gain, can realize quantitative photoelectric conversion, has a wide dynamic range, is suitable for various infrared photoelectric development scenarios, has excellent performance, is cost-effective, provides all-round technical support, and is often used in medium and long-wave infrared measurements.
Name | Model | Description | Parameter | Price |
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● The photosensitive range covers 2-11um, which is often used in medium and long-wave infrared measurement.
● Amplified detector, 8-level adjustable gain, quantitative photoelectric conversion.
● Wide dynamic range, uncooled, suitable for various photoelectric development scenarios.
● Excellent performance, high cost performance, all-round technical support
● Provide non-standard customized services
Performance Specifications
Product Number | InAsSb-2/11um-1X1-AG8 | InAsSb-2/5um-2X2-AG8 | |||
Wavelength range | 2~11um | 2~5.3um | |||
Peak wavelength | 5.6um | 4.1um | |||
Response time constant | 3ns | 100ns | |||
D* | 7.0X107cm·Hz1/2/W | 1.0X109cm·Hz1/2/W | |||
Signal amplitude | Hi-Z load: 0~10V 50Ω load: 0~5V | ||||
Gain adjustment method | Rotary gear adjustment, 0~70dB, 10dB per gear, 8 gears in total. Bandwidth is inversely proportional to gain. | ||||
NEP | 1.4X10-9W/√ Hz 2.0X10-10W/√ Hz | ||||
Photosensitive size | 1mm X 1mm | 2mm X 2mm | |||
Photosensitive surface depth | 0.13" (3.3 mm) | ||||
Detector net weight | 0.10kg | ||||
Operating temperature | 10~40℃ | ||||
Storage temperature | -20~70℃ | ||||
Appearance size | 2.79" X 2.07" X 0.89" (70.9 mm X 52.5 mm X 22.5 mm) | ||||
Power supply interface | Power switch | Signal interface | Gain Adjustment | Support rod interface | Optical interface |
LUMBERG RSMV3 FEMALE | Slide switch with LED indicator | BNC female connector | 8-position knob | M4 X 2 | SM1 X 1 SM0.5 X 1 |
Eight-level quantitatively adjustable gain parameters
0dB | 10dB | 20dB | 30dB | ||||
Gain (Hi-Z) | 1.51×103 V/A | Gain (Hi-Z) | 4.75×103 V/A | Gain (Hi-Z) | 1.5 ×104V/A | Gain (Hi-Z) | 4.75×104 V/A |
Gain (50Ω) | 0.75×103 V/A | Gain (50Ω) | 2.38×103 V/A | Gain (50Ω) | 0.75×104V/A | Gain (50Ω) | 2.38×104 V/A |
Bandwidth (BW) | 13MHz | Bandwidth (BW) | 1.7MHz | Bandwidth (BW) | 1.1MHz | Bandwidth (BW) | 300kHz |
Noise (RMS) | ≤250uV | Noise (RMS) | ≤250uV | Noise (RMS) | ≤250uV | Noise (RMS) | ≤250uV |
40dB | 50dB | 60dB | 70dB | ||||
Gain (Hi-Z) | 1.51× 105 V/A | Gain (Hi-Z) | 4.75×105 V/A | Gain (Hi-Z) | 1.5×106V/A | Gain (Hi-Z) | 4.75×106 V/A |
Gain (50Ω) | 0.75× 105 V/A | Gain (50Ω) | 2.38×105 V/A | Gain (50Ω) | 0.75×106V/A | Gain (50Ω) | 2.38×106 V/A |
Bandwidth (BW) | 90kHz | Bandwidth (BW) | 28kHz | Bandwidth (BW) | 9kHz | Bandwidth (BW) | 3kHz |
Noise (RMS) | ≤250uV | Noise (RMS) | ≤250uV | Noise (RMS) | ≤300uV | Noise (RMS) | ≤400uV |
Signal bias | ±8mV(Typ.), ±12mV(Max) |
MCT Response Curve
● Mid- and long-wave infrared measurements
Part Number | Sensitivity range | Photosensitive size | Gain range | Peak wavelength | characteristic |
InAsSb-2/11um-1X1-AG8 | 2~11um | 1mm X1mm | 0~70dB, Eight levels of quantitatively adjustable gain | 5.6um | Ultra-wideband infrared measurements |
InAsSb-2/5um-2X2-AG8 | 2~5um | 2mm X2mm | 4.1um | Large target surface |