2-12um InAsSb amplified photodetector, conventional     


LD-PD PTE.LTD's InAsSb amplified photodetector has a photosensitivity range of 2-11um, 8 levels of adjustable gain, can realize quantitative photoelectric conversion, has a wide dynamic range, is suitable for various infrared photoelectric development scenarios, has excellent performance, is cost-effective, provides all-round technical support, and is often used in medium and long-wave infrared measurements. 



Product model


Name Model Price
2-5.3um InAsSb amplified photodetector   [PDF]  [RFQ]

InAsSb-2/5um-2X2-AG8-C
(Stock NO. Not entered)
[Please inquire]
2-11um InAsSb amplified photodetector   [PDF]  [RFQ]

InAsSb-2/11um-1X1-AG8-C
(Stock NO. Not entered)
[Please inquire]


Parameter



Features

● The photosensitive range covers 2-11um, which is often used in medium and long-wave infrared measurement.

● Amplified detector, 8-level adjustable gain, quantitative photoelectric conversion.

● Wide dynamic range, uncooled, suitable for various photoelectric development scenarios.

● Excellent performance, high cost performance, all-round technical support

● Provide non-standard customized services

Specifications

Performance Specifications


Product   Number

InAsSb-2/11um-1X1-AG8

InAsSb-2/5um-2X2-AG8

Wavelength   range

2~11um

2~5.3um

Peak   wavelength

5.6um

4.1um

Response   time constant

3ns

100ns

D*

7.0X107cm·Hz1/2/W

1.0X109cm·Hz1/2/W

Signal   amplitude

Hi-Z   load: 0~10V             50Ω load: 0~5V

Gain   adjustment method

Rotary   gear adjustment, 0~70dB, 10dB per gear, 8 gears in total. Bandwidth is   inversely proportional to gain.

NEP

1.4X10-9W/√ Hz                               2.0X10-10W/√   Hz

Photosensitive   size

1mm   X 1mm

2mm   X 2mm

Photosensitive   surface depth

0.13"   (3.3 mm)

Detector   net weight

0.10kg

Operating   temperature

1040

Storage   temperature

-2070

Appearance   size

2.79"   X 2.07" X 0.89" (70.9 mm X 52.5 mm X 22.5 mm)

Power   supply interface

Power   switch

Signal   interface

Gain   Adjustment

Support   rod interface

Optical   interface

LUMBERG

RSMV3   FEMALE

Slide   switch with LED indicator

BNC   female connector

8-position   knob

M4   X 2

SM1   X 1

SM0.5   X 1



Eight-level quantitatively adjustable gain parameters

0dB

10dB

20dB

30dB

Gain (Hi-Z)

1.51×10V/A

Gain (Hi-Z)

4.75×10V/A

Gain (Hi-Z)

1.5 ×104V/A

Gain (Hi-Z)

4.75×104 V/A

Gain (50Ω)

0.75×10V/A

Gain (50Ω)

2.38×10V/A

Gain (50Ω)

0.75×104V/A

Gain (50Ω)

2.38×104 V/A

Bandwidth (BW)

13MHz

Bandwidth (BW)

1.7MHz

Bandwidth (BW)

1.1MHz

Bandwidth (BW)

300kHz

Noise (RMS)

≤250uV

Noise (RMS)

≤250uV

Noise (RMS)

≤250uV

Noise (RMS)

≤250uV

40dB

50dB

60dB

70dB

Gain (Hi-Z)

1.51× 10V/A

Gain (Hi-Z)

4.75×10V/A

Gain (Hi-Z)

1.5×106V/A

Gain (Hi-Z)

4.75×106 V/A

Gain (50Ω)

0.75× 10V/A

Gain (50Ω)

2.38×10V/A

Gain (50Ω)

0.75×106V/A

Gain (50Ω)

2.38×106 V/A

Bandwidth (BW)

90kHz

Bandwidth (BW)

28kHz

Bandwidth (BW)

9kHz

Bandwidth (BW)

3kHz

Noise (RMS)

≤250uV

Noise (RMS)

≤250uV

Noise (RMS)

≤300uV

Noise (RMS)

≤400uV

Signal bias

±8mV(Typ.), ±12mV(Max)


MCT Response Curve

2-12.png


Dimension

INAS5.png

Application

● Mid- and long-wave infrared measurements

Ordering Info

Part Number

Sensitivity range

Photosensitive size

Gain range

Peak wavelength

characteristic

InAsSb-2/11um-1X1-AG8

2~11um

1mm X1mm

0~70dB,

Eight levels of quantitatively adjustable gain

5.6um

Ultra-wideband infrared measurements

InAsSb-2/5um-2X2-AG8

2~5um

2mm X2mm

4.1um

Large target surface




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