The laser is is a semiconductor InGaAsP FP laser working at 1550nm wavelength. The device can be delivered in chip and laser bar forms. This high performance, and high reliability laser is suitable for applications in various fiber communication networks and data centers.
Name | Model | Description | Parameter | Price |
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● lGaInAs/InP Ridge Waveguide structure
● Excellent wavelength uniformity
● Wide temperature range from -40 °C to 85 ℃
● 2.5Gb/s speed ratio application for FTTX optical network
Parameter | Condition | Min | Typ. | Max | unit |
Output Power Po | T=25℃ IOP =Ith+20mA | 5.0 | 6.0 | — | mW |
Threshold Current Ith | T=25℃ | — | 8.5 | 13 | mA |
T=85℃ | — | 25 | 35 | mA | |
Slope Efficiency SE | T=25℃ | 0.25 | 0.30 | — | W/A |
T=85℃ | 0.15 | 0.20 | — | W/A | |
Center Wavelength 入o | T=25℃ IOP =Ith+20mA | 1530 | 1550 | 1570 | nm |
Spectral Width AX (FWHM) | IOP =2XIth | — | — | 3.5 | nm |
Backside power Pb | T=25℃ IOP =Ith+20mA | 0.2 | 0.4 | — | mW |
Radiant Beam Angle (FWHM) | 9丄丄 | — | 45 | 50 | deg. |
9∥∥ | — | 25 | 30 | deg. | |
Forward Voltage Vf | Iop=50mA | — | 1.2 | 1.5 | V |
Typical Testing Curve
Unit (mm)
Parameter | Symbol | Min. | Max. | Unit |
Operating temperature | TC | -40 | +85 | ℃ |
Storage temperature | Tst | -40 | +125 | ℃ |
Output power | P max | 20 | mW | |
Reverse voltage | VR | -2 | V | |
Forward current | IF | 150 | mA | |
ESD Voltage | ≥500 | V |
● Telecommunication
● Data Communication
● Storage area network
● MAN
● PON
FP-Chips-☆-A8▽-W□□□□
☆ :Output Power
A:6mW
▽:Wavelength Tolerance
1:±1nm
2:±2nm
3:±3.5nm
□□□□:Wavelength
974: 974nm
*****
980: 980nm
1550: 1550nm