Wavelength

λ

794.5

795

795.5

nm

Optical Power

Pop

1.5

2

-

mW

Threshold Current

Ith

-

0.7

1.0

mA

Operating Voltage

Vop

-

1.96

2.1

V

Beam Divergence (FWHM)

θ

-

8

-

deg

Beam Divergence (1/e²)

θ

-

15

-

deg

Side Mode Suppression Ratio

SMSR

20

-

-

dB

Polarization Extinction Ratio

PER

20

-

-

dB

Linewidth

Linewidth

-

-

100

MHz

Continuous Forward Current

C.W.

4

mA

Maximum Reverse Voltage(Vr)

5

V

Operating Temperature(Top)

0

80

℃

Storage Temperature(Tst)

-40

100

℃

Soldering Temperature(Tsl)

10 secs

260

℃

ESD discharge (HBM)

30

V

Chip Width

145

160

175

µm

Chip length

165

180

195

µm

Chip Thickness

150

155

160

µm

Anode Diameter

80

µm

Aperture Count

1

Cathode

Full backside metal (cathode)