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  • Gain-chip 50mW at 780nm on Carrier

    • Gain-chip 50mW at 780nm on Carrier     


    Gain-chips are critical components for building tunable diode lasers and highly stable external cavity diode lasers. Unlike standard laser diode chips, gain-chips feature deep anti-reflective (AR) coatings on one or both facets, significantly increasing the self-lasing threshold or preventing it. Common external cavity diode laser configurations include Littrow and Littman/Metcalf cavities, where diffraction gratings are used to diffract light of the desired wavelength back along the incident path, with wavelength tuning achieved by rotating the grating. An intracavity lens often collimates the expanded beam onto the grating, and the zero-order beam serves as the laser output.



    Product model


    Name Model Price
    Gain-chip 50mW at 780nm in TO package   [PDF]  [RFQ]

    HP-GC-780-1-TO
    (Stock NO. Not entered)     		[Please inquire]
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    Parameter



    Features

    ● Optimized for wavelength locked operation in external cavity

    ● Broad hopping free tuning range

    ● High SMSR

    ● No self-lasing up to maximum operating current

    ● TE polarization

    Specifications

    Recommended Operating Point

    Parameters

    Value

    Unit

    Current

    150

    mA

    Forward voltage

    1.8

    V

    Heatsink temperature

    25

    ℃


    Expected Tunability Parameters @ CW, recommended operating point, external cavity in Littman configuration with 200% feedback

    Parameter

    Value

    Unit

    Wavelength of maximum power (λmp)

    780

    nm

    Optical output power @ λmp

    30

    mW

    Central wavelength of tuning range

    780

    nm

    Wavelength locking range

    30

    nm

    Chip cavity length

    2

    mm

    Reflectivity of front facet (AR-coated)

    <0.001

    %

    Reflectivity of back facet (HR-coated)

    99

    %


    Absoulute Maximum Ratings

    Parameters

    Min

    Max

    Unit

    Reverse voltage


    1

    V

    Forward current


    300

    mA

    Storage   temperature range (in original sealed pack)

    5

    50

    ℃

    Operating temperature range

    20

    40

    ℃


    Typical Performance Without External Cavity @ CW, 25°C heatsink temperature


    L-I-V curve

    gain1.jpg.png

    ASE spectrum

    gain2.jpg.png


    Typical Performance Without External Cavity @ CW, 25°C heatsink temperature, Littman configuration with 20% feedback, Thorlabs GR-25-1208 grating

    Output power @ 780 nm

    gain3.jpg.png

    Optical spectrum @ 150mA (res. 0.05 nm)

    gain4.jpg.png



    Dimension

    Unit（mm）

    gain5.jpg.png

    Application

    ● External cavity diode lasers

    ● Tunable laser sources



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