850-910nm 56Gbaud 1x4 Array PIN PD Chip     


The LP-PD4x5032 is a high-performance 850-910nm 56Gbaud 1x4 Array PIN Photodiode (PD) chip designed by LD-PD PTE.LTD.. Engineered for next-generation optical communications, this array is optimized for high-speed data transmission in PAM4 applications.



Product model


Name Model Price
850-910nm 56Gbaud 1x4 Array PIN PD Chip   [PDF]  [RFQ]

LP-PD4x5032
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Parameter


Features

● Bandwidth up to 34GHz/channel

● Anti-reflective for 850-910nm

● 250um diode pitch

● φ32um active area

● Low capacitance

● GSG Electrode Structure

Specifications

Parameter

Symbol

Min

Tpye

Max

Unit

Test conditionns

Response range

λ

840

850

910

nm


Responsivity

R


0.55


A/W

λ=850nm


0.65


A/W

λ=910nm

Dark current

ID


0.3

1.0

nA

VR=-5V

Capacitance

C


0.12

0.15

pF

VR=-2V, f= 1MHz

Bandwidth

Bw


34.0


GHz

VR=-2V 3dB down, RL=50Ω

Note: (Tc=25℃, Single Die)


Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Reverse voltage

VRmax

20

V

Operating temperature

Topr

-40 to +85

Storage temperature

Tstg

-55 to +125

Dimension

Dimensions Diagram ( µm)

850-910nm 56Gbaud 1x4 Array PIN PD Chip2.png


Dimension Parameter

Parameter

Symbol

Value

Unit

Active area diameter

D

32

µm

Bond pad size

-

60 x 70

µm

Die size

-

1000 x 250

µm

Diode pitch

-

250

um

Die thickness

t

150 ± 10%

µm


Precautions for use

This chip is susceptible to damage as a result of ESD. Use of ground straps, antistatic mats, and other standard ESD protective equipment is requisite when handling or testing an InGaAs or GaAs PIN/APD chip.



Application

● 400Gbps PAM4

● 200Gbps SFP+

● 4x100Gb ps QSFP

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