Gain chips are semiconductor optical elements used as the optical gain medium of external cavity laser diodes. Gain chips are used as a TLS (Tunable Light Source) that can change the oscillation wavelength using a wavelength selection filter such as a diffraction grating.
| Name | Model | Description | Parameter | Price | 
|---|
Basic parameter:
Parameter  | Symbol  | Test condition  | Min.  | Typ.  | Max.  | Unit  | 
Center wavelength  | λc  | If=100mA Tc=25°C  | 1520  | -  | 1560  | nm  | 
Operation Current  | Iop  | Tc=25°C  | -  | 250  | -  | mA  | 
Forward Voltage  | Vf  | IF=100mA, Tc=25°C  | -  | 1  | 1.5  | V  | 
Spectrum Modulation  | M  | IF=100mA, Tc=25°C  | -  | 3  | -  | dB  | 
ASE Spectrum bandwidth  | BW  | IF=100mA, Tc=25°C  | -  | 50  | -  | nm  | 
Beam Angle  | Ang  | IF=100mA, Tc=25°C  | -  | 19.5  | -  | °  | 
ASE Power  | Po  | IF=100mA, Tc=25°C  | -  | 2  | -  | mW  | 
AR reflectance  | R1  | -  | -  | 0.005  | %  | |
HR reflectance  | R2  | -  | 95  | -  | %  | |
Horizontal divergence Angle  | θ∥  | IF=100mA, Tc=25°C  | -  | 18  | -  | °  | 
Vertical divergence Angle  | θ⊥  | IF=100mA, Tc=25°C  | -  | 29  | -  | °  | 
PIV-25°C

ASE spectrum (100mA, Res: 0.5nm)
Spectrum~0.1dB,3dB BW~50nm,Center wavelength:1555nm



Divergence Angle

Horizontal divergence Angle: 17.74°, Vertical divergence Angle: 28.89°

Horizontal divergence Angle: 17.64°, Vertical divergence Angle: 30.08°
Chip appearance and size, unit (mm)
