760/763nm SM VCSEL Laser diode for O2 Sensing (Without TEC)

The PL-VCSEL-0760-0-A82 760nm VCSEL is a vertical emitting MOVPE grown GaAsP/AlGaAs Single Mode diode laser. The chips are mounted in TO46 can. Wavelength tuning can be achieved via laser current and temperature tuning. package with TEC and PD Built in. It is special designed for TDLAS Application. Good Narrow linewidth made it a great low cost choice for Analyzer measures oxygen manufacture without TEC.

Name	Model	Description	Parameter	Price
763nm SM VCSEL Laser diode Without TEC [PDF] [RFQ]	PL-VCSEL-0763-0-A82-TO46 Stock NO.: A80041008	Central wavelength 763nm, Output power 1mW, Without TEC,Tolerance ±1.5; Free Space	Central wavelength: 763nm Output power: 1mW Spectral Width: 100 MHz Package: TO-46 Connector: Free Space Lead Time: in stock	[Please inquire] Call us
760nm SM VCSEL Laser diode Without TEC [PDF] [RFQ]	PL-VCSEL-0760-0-A82-TO46 Stock NO.: A80041007	Central wavelength 760nm; Output power 1mW, Without TEC; Tolerance ±1.5; Free Space	Central wavelength: 760nm Output power: 1mW Spectral Width: 100 MHz Package: TO-46 Connector: Free Space Lead Time: in stock	[Please inquire] Call us

Name

Model

Description

Parameter

Price

763nm SM VCSEL Laser diode Without TEC [PDF] [RFQ]

PL-VCSEL-0763-0-A82-TO46
Stock NO.: A80041008

Central wavelength 763nm, Output power 1mW, Without TEC,Tolerance ±1.5; Free Space

Central wavelength: 763nm

Output power: 1mW

Spectral Width: 100 MHz

Package: TO-46

Connector: Free Space

Lead Time: in stock

[Please inquire]

Call us

760nm SM VCSEL Laser diode Without TEC [PDF] [RFQ]

PL-VCSEL-0760-0-A82-TO46
Stock NO.: A80041007

Central wavelength 760nm; Output power 1mW, Without TEC; Tolerance ±1.5; Free Space

Central wavelength: 760nm

Output power: 1mW

Spectral Width: 100 MHz

Package: TO-46

Connector: Free Space

Lead Time: in stock

[Please inquire]

Call us

Parameter

Features

● 100 MHz Spectral Bandwidth

● WavelengthTunability

● TO-46 Window with AR Coating

● Optimized for O₂ Sensing

Laser Specifications

Condition:TO P = 20°C, IO P = 2.0 mA unless otherwise stated (TO P = chip backside temperature, controlled by the TEC)

Parameters	Symbol	Min	Typ	Max	Unit	Remark
Emission Wavelength	λ_R	Detail precision Wavelength Choose From Below Absorption Line
Threshold current	I_TH		0.5		mA
Output Power	P_opt	0.25	0.5	0.75	mW
Threshold Voltage	U_TH		1.8		V
Driving Current	IOP			2	mA	Popt = 0.3 mW
Laser voltage	UOP		2		V	Popt = 0.3 mW
Electro optic conversion rate	ηWP		12		%	Popt = 0.3 mW
Slope efficiency	ηS		0.3		W/A
Differential series resistance	RS		250		Ω	Popt = 0.3 mW
3dB bandwidth	ν3dB	0.10			GHz	Popt = 0.3 mW Due to ESD protection diode
Relative intensity noise	RIN		-130	-120	dB/Hz	Popt = 0.3 mW @ 1 GHz
Wavelength tuning over current			0.6		nm/mA
Thermal resistance (VCSEL chip)	R_thermal	3		5	K/mW
Side mode supression		25			dB	I = 2 mA
Beam divergence	θ	10		25	°	Popt = 0.3 mW, full width 1/e2
Spectral Width			100		MHz	Popt = 0.3 mW

Spectrum

W4_FRMP[F%QS76~VX)G8E[1.jpg

L-I Curve(T@25°C)

H4~TA2G{2~842EG26(LCJLK.jpg

We strongly suggest the Maximum Current within 2mA in order to guarantee the performance this VCSEL Diode.

Oxygen Absorption line

Dimensions and Pin definitions

Dimensions Unit in: mm

Pin Number	Description
1	LD-
2	LD+

Absolute maximum ratings

Item	Unit	Min	Typ	Max
Store Temperature	℃	-40	25	125
Chip Temperature	℃	+10	25	40
Operating Current	mA	0	2	2.5
Forward Voltage	V	0.8	1.2	1.8
Soldering Temperature*	℃	100	130	270
Electrical Power Dissipation	mw	-	-	5

Application

●TDLAS O₂ Sensing

●FTIR

Ordering Info

PL-VCSEL-□□□□-☆-A8▽-TO46

□□□□: Wavelength

0760: 760nm

*****

1653.7: 1653.7nm

☆ : TEC

0: Without TEC

1: With TEC

▽: Wavelength Tolerance

1: ±0.5nm

2: ±1.5nm

760/763nm SM VCSEL Laser diode for O2 Sensing (Without TEC)

Product model

Parameter

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