The infrared extended InGaAs amplified photodetector has a sensitive range of 800nm~2600nm, 8 levels of adjustable gain, can realize quantitative photoelectric conversion, and has a wide dynamic range. It is suitable for various optoelectronic development scenarios, has excellent performance, and is cost-effective. It provides omnidirectional technical support and is often used in near- and mid-infrared light measurement.
Name | Model | Description | Parameter | Price |
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● The photosensitive range covers 800nm~2600nm, which is often used for near-mid-infrared light measurement
● Amplified detector, 8-level adjustable gain, quantitative photoelectric conversion
● Wide dynamic range, suitable for various infrared photoelectric development scenarios
● Excellent performance, high cost performance, all-round technical support
● Provide non-standard customized services
Parameter | Specifications |
Wavelength Range | 800-2600nm 800-2200nm |
Response Time Constant | 25ns |
Gain Range | 1.51kV/A~4.75MV/A;0.75kV/A~2.38MV/A |
Signal Amplitude | 0~10V;0~5V |
Gain Adjustment Method | 0~70dB, 10dB per level, 8 levels in total |
NEP | 1mm×1mm; 2mm×2mm |
Photosensitive Surface Depth | 0.13" (3.3 mm) |
Detector Net Weight | 0.10kg |
Operating Temperature | 10-40℃ |
Storage temperature | -20-70℃ |
Dimensions | 2.79" X 2.07" X 0.89" (70.9 mm X 52.5 mm X 22.5 mm) |
Response Curve:
unit(mm)
● Near and mid-infrared light measurement