Features
● Low dark count rate at high temperature:<150 cps @ 20% detection efficiency @ -30°C @ 100 MHz
● Supports high-speed gated mode: ≥100 MHz, as well as free-running mode applications
● Back-illuminated, 10-pin butterfly cooled package with FC-PC single-mode pigtail
● High detection efficiency with traveling-wave electrode: >20% with after-pulse probability below 2.5%
Operating Environment
● Operating temperature: -50°C to +80°C
● Storage temperature: -50°C to +85°C
Key Parameter
SPAD Device Technical Specifications
Product Part Number | LPWBHT-BT10-G |
Operation Temperature | -50~80℃ |
Storage Temperature | -50℃~+85℃ |
Optoelectronic Specifications
Parameter | Unit | Test Conditions | Min. | Max. |
DC characteristic Te=23±2℃ | Breakdown Voltage (Vbr) | V | Ia=10μA | 50 | 70 |
Responsivity (Re) | A/W | λ=1.55μm, V=Vbr-2V, Φe=1μW | 8 | - |
Dark Current (Ia) | nA | V=Vbr-2V, Φe=0 | - | 1 |
Capacitance (Cot) | pF | V=Vbr-2V, f=1MHz | - | 0.35 |
Temperature Coefficient of Breakdown Voltage (n) | V℃ | Top=-40~+ 30℃,I=10μA,
Φe=0 | - | 0.15 |
Geiger-Mode Characteristics
(Top = –30°C) | Photon Detection Efficiency (PDE) | % | 0.1ph/pulse, λ=1.55μm | 20 | - |
Dark Count Rate (DCR) | kHz | fg=100MHz, PDE=20% | - | 1.5 |
Afterpulse Probability (APP) | % | - | 2.5 |
TEC Specifications
Parameter | Unit | Max. |
Performance
(323 K / N₂) | △Tmax | K | 119 |
Qmax | W | 0.8 |
△Imax | A | 2.5 |
Umax | V | 2.2 |
ACR | Ohm | 0.78 |
Absolute maximum rating
Thermistor 5 kS at 25℃
Thermistor Constant A=1.2548E-03,B=2.3738E-04,C=1.3222E-07
Parameter | Unit | Rated value |
Parameter | Soldering Temperature, Tsd (Time) | ℃ | 260(10s) |
DC Reverse Bias Voltage, Vr | V | Vbr |
Excess Bias Pulse Amplitude, Vg | V | 10 |
Input Optical Power, Φe (Continuous) | mW | 1 |
Forward Current, Ie (Continuous) | mA | 1 |
Mechanical structure
Package structure | Dimensions | mm | 1000(L)×10.5(W)×8.77(H) |
Package type | - | Hermetic / Non-Hermetic |
Fiber Pigtail | FC-PC Single-Mode Fiber Pigtail |
ESD Test | Standard: MIL-STD-883E, Method 3015.7, Class 1 (≥300 V) |
Product Standards | Compliant with relevant requirements of GJB8119-2013 “General Specification for Semiconductor Optoelectronic Devices” |
Typical curve
Dimensions and Pin definitions
Product dimensions
Pin definition
PIN# | Symbol | Description |
1 | APD_C | APD cathode |
2 | D1_C | Balance diode cathode |
3 | GND | Case ground |
4 | TH1 | Thermistor terminal 1 |
5 | TEC- | TEC negative terminal |
6 | TEC+ | TEC positive terminal |
7 | TH2 | Thermistor terminal 2 |
8 | GND | Case ground |
9 | D1_A | Balance diode anode |
Version Description
No. | Version | Revision Date | Revision Content |
1 | V1.0 | 2025.12.5 | New document added |
Application
● Quantum cryptography / Quantum key distribution (QKD)
● Biomedical instrumentation
● Long-range LiDAR systems
● Low-light-level detection applications
