LPWBHT-BT10-G High-Temperature Geiger-Mode InGaAs/InP Single-Photon Avalanche Diode (SPAD) is a high-performance optoelectronic device specially designed for single-photon detection and counting in the near-infrared band. It is developed based on an InGaAs/InP heterojunction semiconductor material system and is specially optimized for single-photon detection scenarios over a wide temperature range of 0 °C and above. Under the premise of reducing cooling power consumption and system complexity, it achieves high-efficiency and low-dark-count single-photon signal acquisition, and can meet the stringent technical requirements of high-end fields such as quantum key distribution and weak-light detection.
The device provides a spectral response range covering the 900–1700 nm near-infrared band, offering ultra-high detection sensitivity at the single-photon level. At the same time, the optimized high-temperature-stable design ensures performance consistency over a wide operating temperature range. This not only meets the requirements for compact equipment integration, but also supports long-term stable operation under complex conditions such as outdoor base stations and industrial control environments.
SPAD Device Technical Specifications
Product Part Number | LPWBHT-BT10-G |
Operation Temperature | -50~80℃ |
Storage Temperature | -50℃~+85℃ |
Optoelectronic Specifications
Parameter | Unit | Test Conditions | Min. | Max. |
DC characteristic Te=23±2℃ | Breakdown Voltage (Vbr) | V | Ia=10μA | 50 | 70 |
Responsivity (Re) | A/W | λ=1.55μm, V=Vbr-2V, Φe=1μW | 8 | - |
Dark Current (Ia) | nA | V=Vbr-2V, Φe=0 | - | 1 |
Capacitance (Cot) | pF | V=Vbr-2V, f=1MHz | - | 0.35 |
Temperature Coefficient of Breakdown Voltage (n) | V℃ | Top=-40~+ 30℃,I=10μA,
Φe=0 | - | 0.15 |
Geiger-Mode Characteristics
(Top = –30°C) | Photon Detection Efficiency (PDE) | % | 0.1ph/pulse, λ=1.55μm | 20 | - |
Dark Count Rate (DCR) | kHz | fg=100MHz, PDE=20% | - | 1.5 |
Afterpulse Probability (APP) | % | - | 2.5 |
TEC Specifications
Parameter | Unit | Max. |
Performance
(323 K / N₂) | △Tmax | K | 119 |
Qmax | W | 0.8 |
△Imax | A | 2.5 |
Umax | V | 2.2 |
ACR | Ohm | 0.78 |
Absolute maximum rating
Thermistor 5 kS at 25℃
Thermistor Constant A=1.2548E-03,B=2.3738E-04,C=1.3222E-07
Parameter | Unit | Rated value |
Parameter | Soldering Temperature, Tsd (Time) | ℃ | 260(10s) |
DC Reverse Bias Voltage, Vr | V | Vbr |
Excess Bias Pulse Amplitude, Vg | V | 10 |
Input Optical Power, Φe (Continuous) | mW | 1 |
Forward Current, Ie (Continuous) | mA | 1 |
Mechanical structure
Package structure | Dimensions | mm | 1000(L)×10.5(W)×8.77(H) |
Package type | - | Hermetic / Non-Hermetic |
Fiber Pigtail | FC-PC Single-Mode Fiber Pigtail |
ESD Test | Standard: MIL-STD-883E, Method 3015.7, Class 1 (≥300 V) |
Product Standards | Compliant with relevant requirements of GJB8119-2013 “General Specification for Semiconductor Optoelectronic Devices” |
Typical curve
