Thin-Film Lithium Niobate Ultra-High Bandwidth Intensity Modulator     


The Thin-Film Lithium Niobate Ultra-High Bandwidth Intensity Modulator is a high-performance electro-optic conversion device independently developed by our company, with full proprietary intellectual property rights. The product is packaged using high-precision optical coupling and assembly techniques, achieving an electro-optic 3 dB bandwidth of up to 70 GHz. Compared with traditional bulk lithium niobate crystal modulators, this product features low half-wave voltage (Vπ), high stability, compact size, and thermal-optic bias control. It can be widely applied in digital optical communications, microwave photonics, backbone communication networks, and research projects in related communication fields.



Product model


Name Model Price

Parameter


Features

● RF bandwidth up to 70 GHz

● Low half-wave voltage

● Low insertion loss down to 5 dB

● Small device size

Specifications

Product parameters: C band

Category

Parameters

Symbol

Unit

Index

Optical performance (@25°C)

Operating Wavelength (*)

λ

nm

~1550

Optical Extinction Ratio (@ DC) (**)

ER

dB

≥20

Optical Return Loss

ORL

dB

≤-27

Optical Insertion Loss

IL

dB

Maximum value: 6

Typical value: 5

Electrical Performance (@25°C)

3 dB Electro-Optical Bandwidth (from 2 GHz)

S21

GHz

Minimum value: 63

Typical value: 65

RF Half-Wave Voltage (@ 50 kHz)

V

≤4

Thermal Bias Half-Wave Power

mW

≤50

RF Return Loss

S11

dB

≤-10

Operating Conditions

Operating Temperature (*)

TO

°C

-20~70

* Customizable.

** High extinction ratio (> 25 dB) available on request.


Damage threshold

If the device operates beyond the maximum damage threshold, it will cause irreversible damage to the device. 

Parameters

Symbol

Min.

Max.

Unit

RF input power

Sin

-

18

dBm

RF input swing voltage

Vpp

-2.5

+2.5

V

RF input RMS voltage

Vrms

-

1.78

V

Optical input power

Pin

-

20

dBm

Thermal bias voltage

Uheater

-

4.5

V

Thermal bias current

Iheater

-

50

mA

Storage temperature

TS

-40

85

Relative humidity (non-condensing)

RH

5

90

%


S21 test sample image (90 GHz typical)

Thin Film Lithium53.png

Figure 1: S21 

Thin Film Lithium54.png

Figure 1: S11

Electrostatic Discharge (ESD) Protection

This product contains ESD-sensitive components (MPDs). Necessary ESD protection measures must be taken when using it.

Thin Film Lithium55.png


Dimensions and Pin definitions

Package dimensions and pin definition (unit: mm)

Thin Film Lithium51.png

*Note:

1.Unless other wise specified tolerance:±0.15 mm;

2.The REF.dimension will not be measured in batch.


Pin

Symbol

Description

1

-

N.C.   (Not Connected)

2

-

N.C.   (Not Connected)

3

Heater

Thermo-Optic   Bias Electrode

4

Heater

Thermo-Optic   Bias Electrode

5

MPD0+

Monitor   PD Anode (Modulator Output)

6

MPD0-

Monitor   PD Cathode (Modulator Output)

RF

RF   Connector

1.0   mm K connector

In

Input   fiber

FC/APC,   PMF

Out

Output   fiber

FC/APC,   PMF


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