Si APD Receiver with Amplifier, 0.8mm, 50MHz, TO-8

The PL-400-SIA-AR0800-TO8-TIA is a Silicon Avalanche Photodiode (Si APD) Amplifier Module with 50 MHz bandwidth and includes our C30817 silicon avalanche photodiode (APD). With a useful diameter of 0.8 mm, the C30950EH provides good response between 400 and 1100 nm and is supplied in a modified 12-lead TO-8 package.

Name	Model	Description	Parameter	Price
φ3mm 50MHz Si APD Photodiodes [PDF] [RFQ]	PL-400-SIA-AR3000-TO8-TIA-50 (Stock NO. Not entered)	Response Spectrum 400~1100nm, TO8 Package, 50MHz, with preamplifier module, Temperature sensor	Response wavelength: 400-1100nm Material: Si Active area: 3mm Package: TO-8 Lead Time: 3-4 weeks	[Please inquire] Call us
φ0.8mm 130MHz Si APD Photodiodes [PDF] [RFQ]	PL-400-SIA-AR0800-TO8-TIA-130 (Stock NO. Not entered)	Response Spectrum 400~1100nm, TO8 Package, 130MHz, with preamplifier module, Temperature sensor	Response wavelength: 400-1100nm Material: Si Active area: 0.8mm Package: TO-8 Lead Time: 3-4 weeks	[Please inquire] Call us
φ0.8mm 50MHz Si APD Photodiodes [PDF] [RFQ]	PL-400-SIA-AR0800-TO8-TIA-50 (Stock NO. Not entered)	Response Spectrum 400~1100nm, TO8 Package, 50MHz, with preamplifier module, Temperature sensor	Response wavelength: 400-1100nm Material: Si Active area: 0.8mm Package: TO-8 Lead Time: 3-4 weeks	[Please inquire] Call us

Name

Model

Description

Parameter

Price

φ3mm 50MHz Si APD Photodiodes [PDF] [RFQ]

PL-400-SIA-AR3000-TO8-TIA-50
(Stock NO. Not entered)

Response Spectrum 400~1100nm, TO8 Package, 50MHz, with preamplifier module, Temperature sensor

Response wavelength: 400-1100nm

Material: Si

Active area: 3mm

Package: TO-8

Lead Time: 3-4 weeks

[Please inquire]

Call us

φ0.8mm 130MHz Si APD Photodiodes [PDF] [RFQ]

PL-400-SIA-AR0800-TO8-TIA-130
(Stock NO. Not entered)

Response Spectrum 400~1100nm, TO8 Package, 130MHz, with preamplifier module, Temperature sensor

Response wavelength: 400-1100nm

Material: Si

Active area: 0.8mm

Package: TO-8

Lead Time: 3-4 weeks

[Please inquire]

Call us

φ0.8mm 50MHz Si APD Photodiodes [PDF] [RFQ]

PL-400-SIA-AR0800-TO8-TIA-50
(Stock NO. Not entered)

Response Spectrum 400~1100nm, TO8 Package, 50MHz, with preamplifier module, Temperature sensor

Response wavelength: 400-1100nm

Material: Si

Active area: 0.8mm

Package: TO-8

Lead Time: 3-4 weeks

[Please inquire]

Call us

Parameter

Features

● Si APD receiver module with 50 MHz bandwidth

● Spectral response: 400 to 1100 nm

● Hermetally-sealed TO-8 package

● High reliability

● Fast overload recovery

● Light entry angle 130°

● Pin compatible with the Excelitas C30659 Series

E/O Characteristics

The Opto-electronic Characteristics(Tc=22± 3℃,VCC/VEE=±5V,AC Rl=50Ω)

Parameters	Sym.	Test conditions	Min	Typ	Max	Unit
Response Spectrum	λ	—	400～1100			nm
Active Diameter	D	—	0.8			mm
Reverse breakdown voltage	VBR	dark current ID=10μA,Optical output power φe=0	200		450	V
Operating voltage	VR	0.90×VBR	320			V
Responsivity	RV	M=100,λ=1.06μm,pulse width TW=100ns		150		kV/W
Dynamic range	DY	M=100,λ=1.06μm	25			dB
-3dB bandwidth	BW	M=100,λ=1.06μm, pulse width TW=100ns		35		MHz
Rise/Fall time	Tr	M=100,λ=1.06μm, pulse width TW=100ns		10		ns
Noise Equivalent Power	NEP	M=100,f=100kHz,△f=1.0Hz			0.20	pW/ √Hz
Output impedance	RO			33		Ω
Output Voltage Swing	VO	-		0.7		V
Offset Voltage	Voffset	-		-0.7		V
Positive Supply Current	ICC				10	mA
Negative Supply Current	IEE				10	mA
Temperature coefficient	σ	-45℃~+70℃		2.4		V/℃
Concentricity	△D	-			50	μm

Typical Performance Curves（Tc=23±2℃,VCC/VEE=±5V,AC Rl=50Ω)

Figure1 Responsivity vs. Wavelength

Figure2 Photo Current vs. Reverse Voltage(λ=1.06μm）

Figure3 Noise Equivalent Power vs. Bandwidth

Package Size

unit：mm

The package

Dimension symbols	ΦD1	ΦD2	H	Φe	ΦD3	L	e1	e2	d1	d2	H1）
Max	13.94	11.10	5.65	0.55	15.50	15	10.20	2.60	0.85	1.05	-
Typ.	-	-	-	-	-	-	-	-	-	-	1.45
Min	13.90	10.90	5.25	0.45	15.20	10	10.00	2.40	0.75	0.95	-

Note: 1) Optical distance between light sensitive surface and light window surface.

Pin definition

Outlet arrangement

PIN#	Function	Symbol
1	Output	VOUT
6/7/10	Ground	GND
2/5/7/11	Suspend or ground	N.C or GND
3	Negative power supply	VEE
4	APD bias working voltage	VR
8	Suspend or ground	N.C or GND
9	Suspend or ground	N.C or GND
12	Positive power supply	VCC

Maximum Ratings

Parameter	Symbol	Rating	Unit
APD voltage supply	VR	VBR	V
Operating temperature	TC	-45～+85	℃
Storage temperature	TSTG	-55～+100	℃
Maximum optical input power	Pin	10	mW
Module mains voltage	Vcc/VEE	±9	V
Power dissipation	Pw	100	mW
Soldering temperature(time)	-	300（10s）	℃

The cautions

Pins are connected strictly according to pins illuminating,Load need large than 10kΩ when coupling output DC.

It should be kept in storage at an environment that has -55～+100℃ and less than 80％ relative humidity,dryness,airiness,no causticness gas.

The suitable ESD protecting mersures are recommend in storage,transporting and using

It's high voltage device,so we need proper design and measure to escape cause damage to human body when using and operating.

Application

● Range Finding

● Confocal Microscope

● LiDAR

● Laser designation

● Scanning laser ophthalmoscope

Si APD Receiver with Amplifier, 0.8mm, 50MHz, TO-8

Product model

Parameter

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