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    • LP3000F4 InGaAs Four Quadrants Monitor PD Chip     


    InGaAs Quadrant PIN Detector, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 4x3.0mm  in diameter. Planar-passivated device structure.



    Product model


    Name Model Price
    3000um InGaAs Four Quadrants Monitor PD Chip   [PDF]  [RFQ]

    LP3000F4     		[Please inquire]
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    Parameter


    Features

    ● Φ3500nm active area

    ● High responsivity

    ● Low capacitance

    ● Low dark current

    ● Top illuminated planar structure

    Key Parameter

    Parameters（Tc=25℃）

    PARAMETER

    SYMBOL

    MIN

    TYP

    MAX

    UNIT

    TEST   CONDITIONS

    Response range

    λ

    900


    1650

    nm


     Responsivity

    R

    0.85

    0.90


    A/W

    λ= 1310nm


    0.95


    λ= 1550nm


    0.2


    λ=850nm

    Dark current

    ID


    52.0

    10.0

    nA

    VR=-5V

    Capacitance

    C


    120

    160

    pF

    VR=-5V,   f= 1MHz


    Absolute Maximum Ratings

    PARAMETER

    SYMBOL

    VALUE

    UNIT

    Reverse voltage

    VRmax

    20

    V

    Operating temperature

    Topr

    -40 to +85

    ℃

    Storage temperature

    Tstg

    -55 to +125

    ℃


    Dimension

    PARAMETER

    SYMBOL

    VALUE

    UNIT

    Active area diameter

    D

    3000

    µm

    Bond pad diameter

    -

    120

    µm

    Die size

    -

    3180x3180

    µm

    Die thickness

    t

    180±20

    µm


    Precautions for use

    This chip is susceptible to damage as a result of ESD. Use of ground straps, antistatic mats, and other standard ESD protective equipment is requisite when handling or testing an InGaAs or GaAs PIN/APD chip.


    Application

    ● Beam Alignment

    ● Optical Tracking,Positioning

    ● Laser Position Monitor



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