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    • High power 1310nm CW 100mW DFB Laser Chip     


    LD-PD DFB1310nm-100 High power distributed feedback laser (DFB) is a CW InP MQW laser diode. High thermal stability, high side-mode suppression ratios (SMSR).



    Product model


    Name Model Price
    High power 1310nm CW 100mW DFB Laser Chip   [PDF]  [RFQ]

    DFB1310nm-100     		[Please inquire]
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    Parameter


    Features

    ● Center wavelength at O-band

    ● More than 100mW Output power

    ● Single transverse mode

    ● Compliant with ROHS

    E/O Characteristics

    Parameter

    Symbol

    Test Conditions

    Min.

    Typ.

    Max.

    Unit

    Threshold   Current

    Ith

    CW Top：25℃


    25

    40

    mA

    CW Top：25℃


    50

    100

    mA

    CW Top：25℃ 100mW


    260

    350

    mA

    CW  Top：75℃ 100mW


    400

    550

    mA

    Forward Voltage

    Vf

    If≤550mA


    1.8

    2.5

    V

    Peak   wavelength

    λ

    CW 0~75℃

    1305


    1317

    nm

    Wavelength/temperature coefficient


    CW


    0.098


    nm/℃

    Side Mode Suppress Ratio

    SMSR

    Po=Pf

    35



    dB

    Beam Divergence Angle

    (Horizontal, FWHM)

    θh

    If=Ith+20mA


    14

    26

    deg

    Beam Divergence Angle

    (Vertical, FWHM)

    θv

    If=Ith+20mA


    26

    30

    deg

    Relative   intensity noise

    RIN

    25~75℃


    -145

    -140

    dB/Hz


    Absolute maximum ratings

    Parameter

    Symbol

    Min.

    Typ.

    Max.

    Unit

    Forward Current (LD)

    If



    600

    mA

    Reverse Voltage (LD)

    Vr



    2.0

    V

    Operating Temperature

    Top

    0


    75

    ℃

    Storage Temperature Package

    Tstg

    -40


    90

    ℃

    Storage Relative Humidity

    RH



    85

    ％

    Solder Reflow Temperature (10sec max)

    Ts



    300

    ℃


    COC test Power and PCE

    Current（mA）

    Power（mW）@25℃

    Power（mW）@75℃

    Forward Voltage（V）

    PCE%@75℃

    50

    10.39

    0.09

    1.10

    0.2%

    100

    37.47

    18.36

    1.20

    15.3%

    150

    64.15

    43.25

    1.30

    22.2%

    200

    90.23

    64.31

    1.40

    23.0%

    250

    115.94

    87.51

    1.50

    23.3%

    300

    141.2

    108.41

    1.60

    22.6%

    350

    165.51

    130.81

    1.70

    22.0%

    400

    189.1

    143.15

    1.78

    20.1%

    450

    211.84

    159.64

    1.87

    19.0%

    500

    233.88

    170.64

    1.95

    17.5%

    550

    254.68

    177.57

    2.05

    15.7%

    600

    274.79

    183.64

    2.14

    14.3%

    P4.png



    Dimension

    Outline Drawing

    (1) Bare die form

    PJ.png

    Parameter

    symbol

    Value

    Unit

    Cavity Length

    L

    1000±30

    µm

    Width

    W

    250±10

    µm

    Thickness

    H

    110±10

    µm


    P5.png

    1310nm CW high-power laser uses a buried waveguide.


    Application

    ● Silicon photonic optical source

    ● CW optical source in CATV

    ● long haul WDM

    ● Sensing

    ● RF links



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